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Multiple quantum well for ultraviolet light emitting diode and a production method therefor

A technology of light-emitting diodes and multiple quantum wells, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low light-emitting efficiency of light-emitting diodes and achieve the effect of suppressing dislocations

Pending Publication Date: 2014-04-02
CHIP TECH
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Problems solved by technology

[0004] However, when metalorganic chemical vapor deposition is used to manufacture light-emitting diodes with a multi-quantum well structure, the multi-quantum wells are deposited at a high temperature above 800°C, and dislocations (dislocation) caused by differences in thermal expansion coefficients occur widely, which has The luminous efficiency of this multi-quantum well light-emitting diode is very low

Method used

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  • Multiple quantum well for ultraviolet light emitting diode and a production method therefor
  • Multiple quantum well for ultraviolet light emitting diode and a production method therefor
  • Multiple quantum well for ultraviolet light emitting diode and a production method therefor

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Embodiment Construction

[0015] Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

[0016] Such as figure 1 As shown, the ultraviolet light-emitting diode of one embodiment of the present invention uses multiple quantum wells to alternately stack AlN barrier atomic layers and GaN barrier atomic layers on the AlN barrier atomic layers to form Al x1 Ga 1-x1 N barrier section.

[0017] Then, in Al x1 Ga 1-x1 AlN well atomic layers and GaN well atomic layers on the AlN well atomic layers are alternately stacked on the N barrier part to form an Al x2 Ga 1-x2 N quantum well part.

[0018] Here, the Al x1 Ga 1-x1 N barrier and Al x2 Ga 1-x2 In the N quantum well part, use atomic layer deposition (Atomic Layer Deposition; ALD) to perform epitaxy in the crystal growth direction of the reaction substrate by supplying high-voltage aluminum source precursors and gallium source precursors below 400°C. grow.

[0019] On the other hand, Al...

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Abstract

Provided is a multiple quantum well for an ultraviolet light emitting diode, comprising: an Alx1Ga1-x1N barrier unit in which are alternately disposed an AlN barrier atomic layer and a GaN barrier atomic layer on the AlN barrier atomic layer; and an Alx2Ga1-x2N quantum well unit in which are alternately disposed an AlN well atomic layer formed on the Alx1Ga1-x1N barrier unit and a GaN well atomic layer formed on the AlN well atomic layer. The Al compositional ratio (x1) in the Alx1Ga1-x1N barrier unit is between 0 and 0.7; the Al compositional ratio (x2) in the Alx2Ga1-x2N quantum well unit is between 0 and 0.7; the Al compositional ratio (x1) in the Alx1Ga1-x1N barrier unit is larger than the Al compositional ratio (x2) in the Alx2Ga1-x2N quantum well unit; and the Alx1Ga1-x1N barrier unit and the Alx2Ga1-x2N quantum well unit are alternately laminated at least twice.

Description

technical field [0001] The present invention relates to multi-quantum wells for ultraviolet light-emitting diodes and a manufacturing method thereof. More specifically, it relates to an atomic layer deposition method (Atomic Layer Deposition; ALD) capable of achieving low-temperature deposition, which alternately forms barrier layers of high-quality thin films A multi-quantum well for an ultraviolet light-emitting diode capable of effectively suppressing dislocation and a quantum well layer and a manufacturing method thereof. Background technique [0002] Recently, GaN-based light-emitting diodes (Light Emitting Diodes; LEDs) have attracted attention as next-generation light-emitting elements that can maximize energy saving. The light-emitting region of such GaN-based light-emitting diodes has expanded from visible light to ultraviolet rays. [0003] Conventional light-emitting diodes with multiple quantum well structures use Metal Organic Chemical Vapor Deposition (MOCVD) t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/06
CPCH01L33/08H01L33/0075H01L33/007H01L33/32H01L33/06H01L33/04
Inventor 赵炳求闵在植权世薰
Owner CHIP TECH
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