Upper thermal field used for six inch and eight inch adulterated phosphorus vertical pulling silicon mono crystal manufacture

Abstract

A top heat field for preparing 6-inch and 8-inch heavyly doped monosilicon by straight pulling up is composed of an insulating cover consisting of the upper and lower hollow trancated cones, and an upper cover plate fixed to the top of said insulating cover and put on a supporting pipe. It can enhance the scavenge action of the airflow on the surface of molten body for removing the fine particles from the surface.

Description

technical field [0001] The invention relates to an upper thermal field for manufacturing six-inch and eight-inch heavily phosphorus-doped Czochralski silicon single crystals. Background technique [0002] Heavily doped Czochralski silicon single crystals are used to produce epitaxial substrates. Growing a high-resistivity epitaxial layer on a low-resistivity heavily doped substrate can solve the contradiction between the high breakdown voltage of bipolar transistors (requiring the use of high-resistivity silicon wafers) and low collector resistance, and can reduce bipolar transistors. The power consumption of the pole transistor is improved, and the response effect of its high-frequency signal is improved. Growing a high-resistivity silicon epitaxial layer on a low-resistivity heavily doped silicon substrate can also be used to solve the latch-up problem of CMOS components. [0003] Device manufacturing requires low substrate resistivity, but the ...

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Problems solved by technology

[0018] The invention enhances the purging effect of the air flow on the surface of the melt, and the tiny particles produced by volatilization are effectively blown away from the upper part of the melt; the new thermal field structure strengthens the cooling effect on the single crystal, thereby increasing the temperature at the solid-liquid interface Gradient G, using the new thermal field of the present invention solves the difficult problem that six-inch and eight-inch heavily phosphorus-doped Czochralski silicon single crystals cannot be grown in ordinary standard thermal fields, making six-inch and eight-inch heavily phosphorus-doped Czochralski silicon single crystals The growth becomes as easy as ordinary high-resistivity Czochralski silicon single crystal

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