Composite backing material adapted for InN-GaN epitaxial growth and method for making same

Abstract

A compound substrate material suitable for InN-GaN epitaxial growth is to set a layer of MgIn2O4 o MgO single crystal. The preparation method is to put mixed ingots of MgIn2O4 and In2o3 with gas holes in a Pt pot, put or hang a MgO wafer of double or single polish on Pt silk added by a Pt plates covered by mixed powders of MgIn2O4 and In2O3 and cover the pot closely by a Pt cover then put it in a resistance furnace, heating up to 800~1400deg.c. kept constant for 20~100h, the In2O3 is reacted with MgO in solid phase by In3+ ionic diffusion to get the said material.

Description

technical field [0001] The invention relates to InN-GaN epitaxial growth, in particular to a composite substrate material suitable for InN-GaN epitaxial growth and a preparation method thereof. Background technique [0002] Group III nitride semiconductor material InN-GaN has excellent characteristics, such as stable physical and chemical properties, high thermal conductivity and high electron saturation velocity, and the optical transition probability of direct bandgap materials is an order of magnitude higher than that of indirect bandgap materials. Therefore, broadband Gap InN-GaN-based semiconductors show promising applications in short-wavelength light-emitting diodes, lasers, and UV detectors, as well as high-temperature electronic devices. Due to the relatively high melting point of InN-GaN, N 2 It is very difficult to prepare InN-GaN bulk single crystal with high saturated vapor pressure, so InN-GaN is generally grown on a heterogeneous substrate by epitaxial techno...

AI Technical Summary

Problems solved by technology

[0008] (2) Since the lattice mismatch between MgO crystal and GaN reaches 13%, and it is not stable enough in MOCVD atmosphere, it is less used;

[0009] (3) The above transpar

Images