Multi-quantum well waveguide butt coupling method

Abstract

The invention discloses a multiple quantum well wave-guide end-to-end coupling process comprising, (1) epitaxially growing the multiple quantum well structure of the device A on the substrate, (2) depositing a layer of dielectric-coating, and mask photo-etching, etching the multiple quantum structure besides the A strips, (3) epitaxially growing the multiple quantum well structure of the device B, (4) mask photo-etching the less satisfying growing quality portion of the A and B interface. (5) extending optimization of the designed body material to the larger area, to serve simultaneously as both the up waveguide of device A and B, and the coupling waveguide between them. The process of the invention may be used to eliminate the inanity and multiple quantum well bending caused by direct linkage, to lower coupling loss and to increase optical output power. The invention can be applied to the making of a plurality of photoelectron integrated device.

Description

technical field [0001] The invention relates to a waveguide docking coupling method, in particular to a multi-quantum well waveguide docking in an optoelectronic integrated device (such as a laser, a modulator, an optical amplifier, a filter, and a wavelength converter whose active region is a multi-quantum well) Coupling method. Background technique [0002] To make integrated optoelectronic devices, an important issue is to make low-loss optical channels, so that optical butt coupling can be effectively realized between different components on the same substrate. At present, the optoelectronic monolithic integrated production technology mainly has the following methods: [0003] 1) Selected area growing (SAG) method, see IEEE J. Quantum Electron., Vol. 29, 1993, pp. 2088-2096 and Electron. Lett., Vol. 32, 1996, pp. 109-111). This technology uses a dielectric mask to accelerate the growth of quantum wells in some areas, and achieves the purpose of growing the quantum well...

AI Technical Summary

Problems solved by technology

However, due to the enhancement effect of the edge of the dielectric film when epitaxy is selected, the regrown multiple quantum wells at the interface will bend and pile up, the quality of the material is difficult to guarantee, and large light scattering will occur between components, resulting in the gap between the multiple quantum well waveguides. The coupling efficiency between them is reduced, which affects the improvement of the performance of the entire integrated device

Images