Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Substance for forming electrically-conducting film and electrically-conducting film and its manufacturing method

A conductive film and composition technology, which is applied in the formation of conductive patterns, electrode system manufacturing, printed circuit manufacturing, etc., can solve the problems that it is difficult to obtain low-resistance aluminum patterns, and it is difficult to manufacture fine patterns.

Inactive Publication Date: 2003-12-17
JSR CORPORATIOON
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the obtained aluminum contains impurities, it is difficult to obtain a low-resistance aluminum pattern, and it is also difficult to manufacture a fine pattern with this method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substance for forming electrically-conducting film and electrically-conducting film and its manufacturing method
  • Substance for forming electrically-conducting film and electrically-conducting film and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] A glass substrate was immersed in a 1% toluene solution of titanium bis(acetoacetate)diisopropoxide for 1 hour, then baked at 100°C for 30 minutes, and then baked at 300°C for 30 minutes to prepare a hydrophilic substrate. Under nitrogen atmosphere, the complex compound of 10g triethylamine-alane is dissolved in the mixed solvent that 45g toluene and 45g tetrahydrofuran form to make a solution, the solution is coated on the glass substrate with the speed of 1000rpm by spin coating method, immediately apply The coated substrate was prebaked at 110°C to remove the solvent, thereby forming a film composed mainly of triethylamine-alane complex. When the coating film was further heated at 250° C. for 30 minutes and then at 350° C. for 30 minutes in a nitrogen atmosphere to thermally decompose the film, a film having metallic luster was formed on the glass substrate. When the thickness of the film on the substrate was measured with α-step (product of Tenchor Co., Ltd.), the t...

Embodiment 2

[0052] Using the same hydrophilic glass substrate as in Example 1, the oven-dried film was prepared in the same manner as in Example 1, except that 10 g of the ammonia-alane complex was used instead of 10 g of the triethylamine-alane complex. things. When the thickness of the film on the substrate was measured with α-step (product of Tenchor Co., Ltd.), the thickness was 90 nm. In addition, when the conductivity of the film was checked, it was found that the film was conductive, and its surface resistance value was 120 μΩ□.

Embodiment 3

[0054] Using the same hydrophilic glass substrate as in Example 1, a dried film was prepared in the same manner as in Example 1, except that 10 g of triethylamine-alane complex was replaced by 10 g of phenyldimethylamine-alane complex Alane complexes. When the thickness of the film on the substrate was measured with α-step (product of Tenchor Co., Ltd.), the thickness was 85 nm. In addition, when the conductivity of the film was checked, the film was found to be conductive with a surface resistance value of 95 μΩ□.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film. A conductive film forming composition comprising a complex of an amine compound and aluminum hydride and an organic solvent is applied on a substrate and then subjected to a heat treatment and / or irradiation with light, whereby a conductive film such as an electrode or wiring is produced.

Description

field of invention [0001] The present invention relates to a composition for forming a conductive film, a conductive film using the composition, and a method for producing the composition. In particular, it relates to a composition for forming a conductive film which can be suitably used for forming wiring of electronic components, a method for producing the composition and a film such as a wiring or an electrode produced by the method. Background technique [0002] Aluminum is used as a wiring material in solar cells, semiconductor elements, and various electronic elements such as electronic display devices. Previously, this aluminum film was usually produced by a vacuum process such as sputtering, vacuum deposition or chemical vapor deposition (CVD), and the obtained aluminum film was photolithographically made into an aluminum pattern (pattern; Pattern) with a resist. . However, since this method requires a large-scale vacuum deposition facility, it is disadvantageous i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/08C23C18/10C23C18/14C23C18/16H01B5/14H01B13/00H01J9/02H01L21/288H01L21/768H01L23/498H05K3/10H05K3/24
CPCH01L2924/0002H01L2924/09701C23C18/08H01L23/49883H01L21/76838H05K3/105H01L21/288Y10T428/24917H01L2924/00C09D5/24
Inventor 横山泰明松木安生迫野郁夫小林和树竹内安正
Owner JSR CORPORATIOON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com