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Liquid composition for removing residue of photo-corrosion-inhibitor

A technology for photoresist and residue removal liquid, applied in the field of photoresist residue removal liquid composition), can solve the problems of unpreferable environment, unsatisfactory corrosion inhibitor and the like, and achieve excellent removability, prevent The effect of corrosion

Inactive Publication Date: 2003-06-11
KANTO CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] Therefore, for new materials, various corrosion inhibitors have been studied so far, and they have shown sufficient corrosion prevention effects against acidic removal liquids, but they are environmentally unfavorable and have not been satisfied with existing standards. anti-corrosion agent

Method used

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  • Liquid composition for removing residue of photo-corrosion-inhibitor

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Embodiment Construction

[0041] Examples of the aliphatic polyhydric carboxylic acid and its salt used in the photoresist residue removing liquid composition of the present invention include dibasic carboxylic acids such as oxalic acid, malonic acid, tartaric acid, and succinic acid, and hydroxy dicarboxylic acids such as malic acid. Hydroxytricarboxylic acids such as polycarboxylic acids and citric acid, salts thereof, and the like.

[0042] The composition of the photoresist residue remaining after grinding and polishing differs depending on the material to which dry etching is performed. When dry etching is performed on the interlayer insulating film on the copper wiring, the photoresist residue present on the bottom surface and sidewall of the via hole after grinding and polishing contains copper oxide. Therefore, aliphatic polyhydric carboxylic acid is mentioned as a component which removes a photoresist residue, and can be dissolved and removed by suitably selecting a case. In addition, in the ...

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Abstract

The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulating film etc. This is made possible by a photoresist residue removing liquid composition containing one or more members selected from the group consisting of reducing compounds and their salts and one or more members selected from the group consisting of aliphatic polycarboxylic acids and their salts.

Description

technical field [0001] The present invention relates to a photoresist residue removing liquid composition, more specifically, to a post-dry etching method for removing interlayer insulating materials and wiring materials, capacitors, and electrode materials in the manufacture of semiconductor circuit elements. The photoresist residue removal solution composition of the photoresist residue (the photoresist residue mentioned here includes the photoresist remaining on the substrate surface as incomplete grinding after the polishing process) etchant residue and residual sidewall protection film (also known as rabbit ears) on wiring and via hole sides. Background technique [0002] Dry etching is the most important technique for patterning interlayer insulating film materials, wiring materials, etc. in the manufacturing process of semiconductor circuit elements. [0003] Dry etching is to apply a photoresist on a substrate on which an interlayer insulating material, wiring mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/26G03F7/42H01L21/027H01L21/302H01L21/308
CPCG03F7/422G03F7/42
Inventor 石川典夫大和田拓央
Owner KANTO CHEM CO INC
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