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Preparation for inferface composite semi-conductor nano thinfilm optical catalyst

A photocatalyst and nano-film technology, applied in catalyst activation/preparation, chemical instruments and methods, physical/chemical process catalysts, etc., can solve the problems of inconspicuous interface and easy particle agglomeration, and achieve outstanding interface, uniform film surface, High photocatalytic activity

Inactive Publication Date: 2003-03-26
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common point of the two composite methods is that they are calcined together at the end to form composite particles, which have the disadvantages that the particles are easy to agglomerate and the interface is not obvious.

Method used

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  • Preparation for inferface composite semi-conductor nano thinfilm optical catalyst
  • Preparation for inferface composite semi-conductor nano thinfilm optical catalyst
  • Preparation for inferface composite semi-conductor nano thinfilm optical catalyst

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) TiO 2 Sol and SnO 2 Sol preparation

[0023] Add 8ml of n-butyl titanate (analytically pure) dropwise into 80ml of absolute ethanol with stirring, then add 1ml of diethanolamine (sol stabilizer) to make a solution, oscillate ultrasonically for 15min, store the solution in airtight storage for 3 days, then add 95% Concentration of 40ml of aqueous alcohol, and then airtight storage for gelation for 2 days, the preparation of uniform and transparent TiO 2 Sol.

[0024] 11.2816g SnCl 2 2H 2 O (analytical grade) was dissolved in 50ml of absolute ethanol, a colorless and transparent solution was obtained after ultrasonic oscillation, then 0.18ml of glycerol (sol stabilizer) was added to make a solution, ultrasonic oscillation was performed for 15min, and the solution was refluxed and concentrated (water bath 80 -90°C) for 1 hour, the color of the solution turned into light yellow; the light yellow solution was placed under saturated water vapor for 5 days to cause hydr...

Embodiment 2

[0033] TiO 2 Sol and SnO 2 The preparation of the sol is as in Example 1.

[0034] (1) TiO 2 (3) and SnO 2 (3) Preparation of thin film

[0035] Dip the pretreated stainless steel sheet in TiO 2 In the sol, use the pulling method (speed of 1.5cm / min) for coating, after natural drying at room temperature in the air, calcining under the condition of air atmosphere, heating up to 400°C at a speed of 3°C / min, at this temperature Insulate for 60 minutes, cool down to room temperature naturally, repeat plating 3 times, and calcinate in a muffle furnace for each plating to obtain TiO 2 (3) Film.

[0036] The pretreated stainless steel sheet was immersed in SnO 2 In the sol, use the pulling method (speed of 1.5cm / min) for coating, after natural drying at room temperature in the air, calcining under the condition of air atmosphere, heating up to 400°C at a speed of 3°C / min, at this temperature Insulate for 60 minutes, cool to room temperature naturally, repeat plating 3 times, ...

Embodiment 3

[0041] TiO 2 Sol and SnO 2 The preparation of the sol is as in Example 1.

[0042] (1) TiO 2 (2) and SnO 2 (2) Preparation of thin film

[0043] Dip the pretreated silicon wafer in TiO 2 In the sol, use the pulling method (speed of 6.0cm / min) for coating, after natural drying at room temperature in the air, calcining in the air atmosphere, heating up to 600°C at a speed of 10°C / min, at this temperature Insulate for 10 minutes, cool down to room temperature naturally, repeat plating twice, and calcinate in a muffle furnace for each plating to obtain TiO2 (2) Film.

[0044] Dip the pretreated silicon wafer in SnO 2 In the sol, use the pulling method (speed of 6.0cm / min) for coating, after natural drying at room temperature in the air, calcining in the air atmosphere, heating up to 600°C at a speed of 10°C / min, at this temperature Insulate for 10 minutes, cool down to room temperature naturally, repeat plating twice, and calcinate in a muffle furnace for each plating to ob...

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Abstract

The preparation method of interface composite semiconductor nano film photocatalyst retales to a method for preparing SnO2 / TiO2 interface composite film photocatalyst by using sol-gel method. Said method is characterized by that on the SnO2 film surface formed into crystal phase a TiO2 film is coated to form SnO2 / TiO2 interface composite nano film photocatalyst. Said invention utilizes the scanning electronic microscope, Raman spectrum, UV-visible spectrum and Auger electron microprobe techniques to research its surface form and structure, and utilizes the static photocatalysis estimation device to estimate its activity, and its interface is projected, and its catalytic activity is high.

Description

technical field [0001] The invention relates to a method for preparing SnO by sol-gel method 2 / TiO 2 or / TiO 2 / SnO 2 The invention relates to a photocatalyst method for interfacial composite semiconductor nano film, which belongs to the field of chemistry and chemical engineering. Background technique [0002] Using SnO 2 -TiO 2 Compound semiconductors can extend the spectral response range and enhance the separation of photogenerated electron-hole pairs, thereby improving the photoelectric conversion efficiency. Existing preparation of SnO 2 -TiO 2 The way of compound semiconductor can be roughly divided into two types: compound type and cladding type. Composite type is SnO 2 、TiO 2 The two precursor sols are mixed; the coating type is to generate a semiconductor core first, and then generate another semiconductor outside the core to coat it. The common point of the two composite methods is that they are calcined together at the end to form composite particles, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J21/06B01J37/02
Inventor 朱永法尚静
Owner TSINGHUA UNIV
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