Method for forming shallow junction

Abstract

Present silicide is prepared after insert source / drain and anneal excited to form junctions with the reliability problem mainly on electric drain which influences the final performance of transistors. This ivnention is to form silicide first, then inject in impurities and anneal to junction. The distributed peak value of inserted impurities lies under the silicide avoiding the problem brought with the diffusion of silicide in which the junction is easy to be controlled, high impurities concentration and repeatability, reducing the procedure of taking oxide as the injection mask.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing technology, and in particular relates to a method for forming a drain-source shallow junction. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors continues to shrink. The current mainstream technology of 0.18um technology means that the length of the gate is 0.18 microns. While the line width is continuously shrinking, in order to improve the performance of the transistor, the depth of the source / drain junction is also continuously reduced. The depth of the junction is only tens of nanometers in the 0.18μm process. [0003] The current mainstream process is to grow silicide after the source / drain junction of the transistor is defined, that is, after the high-dose implantation and annealing of the junction are completed. Since the growth of the silicide itself will consume part of the silicon, if the ...

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Problems solved by technology

However, the use of silicide itself as a diffusion source here has certain problems in the control of impurity distribution and process repeatability, and the diffusion process itself has been eliminated in advanced manufacturing processes.

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