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Diluted magnetic ZnO-base semiconductor prepared by sol-gel method

A technology of magnetic semiconductor and gel method, which is used in semiconductor/solid-state device manufacturing, inorganic material magnetism, inductor/transformer/magnet manufacturing, etc. It can solve the problems of difficult to obtain p-n junction homogeneous contact and difficult to obtain p-type materials.

Inactive Publication Date: 2002-12-04
NANJING UNIV
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Problems solved by technology

Unfortunately, ZnO has a single polarity, and the n-type material is easy to grow in situ, while the p-type material is difficult to obtain, so it is difficult to obtain the homogeneous contact of the p-n junction

Method used

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  • Diluted magnetic ZnO-base semiconductor prepared by sol-gel method

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Experimental program
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Embodiment Construction

[0012] Specific steps are as follows:

[0013] 1. Prepare ZnO colloidal solution. Dissolve a certain amount of analytically pure zinc acetate and ferrous chloride in absolute ethanol, and stir evenly

[0014] Stir, and add an appropriate amount of lactic acid dropwise until the solution is about to precipitate. Stirring was continued for 2 hours. Finally get ZnO glue

[0015] body solution. The atomic concentration ratio of iron and zinc is 1 to 15%; the colloidal ratio of Mn, Co and Ni is the same as that of Fe, also in

[0016] 1~15%. Salts of Mn, Co and Ni can be used, as well as chlorides or sulfates.

[0017] 2. Add a drop of 0.02ml of ZnO colloidal solution on the pre-cleaned Si wafer,

[0018] The rate is uniformly coated on the Si wafer.

[0019] 3. The film is placed at room temperature to 100°C for 10 to 30 minutes, and then heat-treated at 240 to 300°C for 5-10 minutes.

[0020] 4. Repeat steps 2 and 3 above several times to obtain ZnO films with differe...

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Abstract

This invention relates to a method for preparing ZnO base dilution magnetic semiconductors with Sol-Gel method by applying Sol-Gel method combined with doped ferromagnetic ions as Fe. Co or Mn. Ni etc. to prepare ZnO base dilution magnetic semiconductor films. It is first to prepare ZnO Gel solution by dissolving a proportion of analytically pure zinc acetate and metal salt (the atomic concentration ratio of Fe and Zinc is 1-1.5%) in asolute alcohol, mixed evenly to get ZnO colloidal solution finally which is informly coated on the rotating Si chips. The film is kept for a period of time under room temperature-100 deg.C after a few minutes of heat treatment, then to go through heat treatment for 0.5-1.5 hours under nitrogen atmosphere at 500-900 deg.C.

Description

1. Technical field: [0001] The invention relates to a growth method of a zinc oxide (ZnO)-based diluted magnetic semiconductor thin film, which mainly adopts a sol-gel method and magnetic ion doping to prepare the ZnO diluted magnetic semiconductor thin film. 2. Technical background [0002] Diluted Magnetic Semiconductor (DMS) is a new type of functional material that dopes magnetic ions in non-magnetic semiconductors (such as IV-VI, II-VI or III-V) and uses carrier control technology to generate magnetism. . The Curie temperature of DMS materials currently studied is relatively low. From the perspective of practical application, it is urgent to find materials with higher Curie temperature. Theoretical work suggests that wide bandgap semiconductors such as GaN and ZnO may be suitable representative materials capable of realizing carrier-induced ferromagnetism at room temperature or higher. [0003] ZnO is a very important representative material of II-VI compound semicond...

Claims

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Application Information

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IPC IPC(8): H01F1/40H01F41/00H01L21/00
Inventor 张荣修向前徐晓峰郑有炓顾书林沈波江若琏施毅韩平朱顺明胡立群
Owner NANJING UNIV
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