Ceramic parts formed micro crowning on its surface and its mfg. method

A manufacturing method, ceramic technology, applied in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc., can solve problems such as broken, reduced mechanical strength of ceramic parts, and reduced mechanical strength

Inactive Publication Date: 2002-09-18
TOSHIBA CERAMICS CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] Moreover, in the case of blasting treatment, etc., it leads to a decrease in the mechanical strength of the ceramic part and a decrease in plasma resistance
This decrease in mechanical strength, especially in the CVD process accompanied by heating, poses problems such as cracking due to thermal stress at the time of film formation.
On the other hand, for plasma resistance, the method of removing fine scratches on the surface is adopted by mirror finishing, etc., but the shape of the ceramic part is restricted.
That is, it is easy to apply mirror finishing to planar ceramic parts, but in the case of a three-dimensional complex shape, it can be said that it is actually difficult to completely remove fine scratches.

Method used

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  • Ceramic parts formed micro crowning on its surface and its mfg. method
  • Ceramic parts formed micro crowning on its surface and its mfg. method
  • Ceramic parts formed micro crowning on its surface and its mfg. method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] *Δ: small effect, ○: large effect.

[0075] When observing and evaluating the surface of the above-mentioned etched alumina ceramic plate with an electron microscope, under the conditions of the present invention, on the surface of the crystal particles constituting the surface of the ceramic substrate, there are a plurality of protruding portions smaller than the crystal particles. of ceramics.

[0076] The electron microscope photographs, such as figure 1 , figure 2 , image 3 and Figure 4 shown. figure 1 and figure 2 It is the case where the surface of alumina ceramics whose surface is ground is treated at an etching solution temperature of 230°C and a pressure of 1 MPa, figure 1 It is a photo taken at 1000 times magnification, figure 2 This is a photo taken at 5000x magnification. image 3 and Figure 4 It is the case where the alumina ceramics with a sintered surface are treated at an etching solution temperature of 230°C and a pressure of 1M...

Embodiment 2

[0097] Alumina ceramic plates with a purity of 99.7% by weight, a bulk density of 3.97g / cm3, and an average particle size of 40 microns were used. On the other hand, an aqueous sulfuric acid solution with a sulfuric acid concentration of 25% by weight was used as an acidic etching solution. Next, immerse the alumina ceramic plate in an acidic etchant, perform an etching treatment for a given period of time, and perform an etching process on the surface layer (within about 80 microns) with a diameter of 0.5 to 10 times the average particle diameter and a large diameter in the depth direction. Concave-convex structure of some micropores. During this etching process, as shown in Table 1, the acidic etching solution was kept at 25 to 230° C., and a pressure of 0.1 to 10 MPa was applied to the acidic etching solution, and the etching time was set in consideration of the holding temperature and pressure of the etching solution.

[0098] Etching solution temperature

(℃) ...

Embodiment 3

[0105] A yttrium aluminum garnet plate with a purity of 97% by weight, a bulk density of 4.32g / cm3, and an average particle size of 5 microns was used. On the other hand, an aqueous sulfuric acid solution with a sulfuric acid concentration of 25% by weight was used as an acidic etching solution. Next, immerse the yttrium aluminum garnet plate in an acidic etching solution at a temperature of 230°C for 3 hours of etching treatment, and carry out an etching process on the surface layer (within about 80 microns) containing a diameter 0.5 to 10 times the average particle size, Concave-convex structuring of micropores with large diameter portions in the depth direction. Figure 7 and Figure 8 The surface layer of the above-mentioned yttrium aluminum garnet plate having a concavo-convex structure including micropores with large-diameter portions in the depth direction is shown planarly at different magnifications. Figure 9 The state (shape) in the concavo-convex structure is furt...

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Abstract

The present invention provides a ceramic component capable of controlling and preventing gas release, having an excellent immobilization effect on other substances attached and deposited on the surface, and less prone to peeling off of other substance particles when used in a thin film forming device, and a manufacturing method thereof. The ceramic part of the present invention is formed on the surface of a dense ceramic base material with a purity of 95% by weight or more, or on the surface of crystal grains near it, forming a plurality of protrusions with a diameter smaller than the diameter of the crystal grains, or with a purity of 95% by weight. The above-mentioned dense ceramics are used as the base material, and the surface layer is a ceramic with a concave-convex structure with a micropore whose diameter is 0.5 to 50 times the average particle size of the ceramic forming the base material and has a large-diameter portion in the depth direction. part. In the ceramic part, the surface of a dense ceramic substrate with a purity of more than 95% by weight and a density of more than 90% of the theoretical density is eroded in an acidic etching solution to form multiple ceramic particles on the surface of the substrate or its vicinity. protruding part to manufacture.

Description

[0001] Field of invention [0002] The present invention relates to a ceramic component whose surface morphology is controlled and a manufacturing method thereof, in particular to a ceramic component formed with fine protrusions on the surface for easy adhesion and bonding of other substances and a manufacturing method thereof. Background technique [0003] In a manufacturing process of, for example, a semiconductor device, a film forming process such as PVD and CVD, or an etching process using a corrosive gas generally constitutes a microfabrication process. Therefore, its proportion in the manufacturing process tends to increase with the miniaturization and complexity of semiconductor device processing. The above-mentioned film formation process and etching process are carried out under strict conditions such as vacuum or plasma atmosphere, and high temperature, and therefore, a corrosion-resistant ceramic material can be used as a processing vessel exposed to plasma. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/00C04B35/111C04B35/115C04B41/53C04B41/91C23C16/44
CPCC04B35/111C04B35/115C04B35/44C04B41/009C04B41/5353C04B41/91C04B2235/3225C04B2235/6582C04B2235/77C04B2235/963C23C16/4404Y10T428/24413Y10T428/31Y10T428/24355Y10T428/249953C04B35/00C04B41/00
Inventor 河合和秀乌井骏藏高桥真人设乐広明德岳文夫市乌雅彦铃木崇松山丰和上本英雄
Owner TOSHIBA CERAMICS CO
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