Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pre cleaning solution recipe for deposit side wall medium of flash memory control grid stack structure

A flash memory and control gate technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, detergent compositions, etc., can solve problems such as consumption and increased production costs, achieve good process stability, increase production, Effect of reducing chemical reagent/DI water consumption

Inactive Publication Date: 2007-02-28
SHANGHAI HUA HONG GROUP +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This consumes a lot of chemical reagents and high-purity water, thus increasing production costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pre cleaning solution recipe for deposit side wall medium of flash memory control grid stack structure
  • Pre cleaning solution recipe for deposit side wall medium of flash memory control grid stack structure
  • Pre cleaning solution recipe for deposit side wall medium of flash memory control grid stack structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The specific implementation steps of the present invention are as follows. The first step of cleaning solution preparation steps:

[0022] 1. Prepare the cleaning solution, measure UDV with a graduated cylinder, and pour it into the clean solution cleaning tank.

[0023] 2. Accurately measure 50ppm ethylenediaminetetraacetic acid with a graduated cylinder, and slowly pour it into the above-mentioned high-purity water cleaning tank.

[0024] 3. Accurately measure TMAH with a measuring cylinder, the weight content is 10%, and slowly pour it into the cleaning tanks of Sheng 1 and 2 above.

[0025] 4. After the above steps 1 to 3 are completed, let the various ingredients be mixed evenly and wait for at least half an hour before they can be used for process cleaning.

[0026] 5. The cleaning solution is heated to the temperature required by the process, the typical temperature is 35°C.

[0027] The second step is to perform pre-cleaning before depositing the sidewall die...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention belongs to the field of integrated circuit manufacturing technology, and is especially one precleaning solution formulation for deposited side wall medium of flash memory control grid stack structure. Available flash memory manufacturing process includes first SPM cleaning, subsequent two RCA cleaning steps, and other steps. The present invention provides one new kind of precleaning solution and makes it possible to replace the complicated cleaning steps with one cleaning step. The present invention results in lowered production cost, raised technological stability and integrated circuit product quality.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit (IC) manufacturing technology, and in particular relates to a new formulation of a pre-cleaning solution for depositing a sidewall medium for manufacturing a flash memory control gate stacking structure. Background technique [0002] We all know that the performance, reliability and yield of silicon circuit products of semiconductor devices are seriously affected by chemical reagent impurities and particle impurities remaining on the surface of silicon wafers or devices. Due to the extreme sensitivity of the semiconductor surface and the characteristics of submicron-sized devices, the effective technology of silicon wafer initial cleaning, oxidation and post-pattern cleaning is even more important than the previous cleaning. Therefore, ultra-clean silicon wafer surface preparation has become one of the key technologies in the production of very large scale integration (VLSI) silicon cir...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C11D7/32H01L21/82
Inventor 王刘坤
Owner SHANGHAI HUA HONG GROUP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com