Semiconductive thin film inner cladding amplifying optical fiber and manufacturing method thereof

Abstract

The invention relates to a novel nano-semiconductor film inner-clad amplifying optical fiber and a manufacturing method thereof, belonging to the technical field of optical fibers. The semiconductor film inner cladding amplifying optical fiber of the present invention is composed of a core, a film inner cladding and an outer cladding, and the semiconductor thin film inner cladding is sandwiched between the core and the outer cladding. The invention provides that the optical fiber prefabricated rod with outer cladding deposition, semiconductor thin film inner cladding deposition and fiber core deposition is directly manufactured on a special MCVD rod making machine by vapor deposition method, and then the optical fiber is drawn. The amplifier made of the nano-semiconductor thin film inner cladding amplifying fiber of the invention has the characteristics of strong integration, wide frequency, high gain, simple structure and the like.

Description

Technical field: [0001] The invention relates to a nano-semiconductor film inner-clad amplifying optical fiber and a manufacturing method thereof, belonging to the technical field of optical fibers. Background technique: [0002] Amplifying optical fiber is an indispensable special optical fiber in optical fiber communication, and it is the core component of optical fiber amplifier. Optical fiber amplifiers have been widely used in long-distance, large-capacity, high-speed communication systems, access networks, optical fiber CATV networks, military systems and other fields for relay amplification, power amplification, and preamplification. When it comes to amplifying optical fiber, people will naturally think of doped rare earth amplifying optical fiber, which is a kind of amplifying optical fiber commonly used at home and abroad. Large companies in some developed countries in the world have invested a lot of manpower and material resources in the research and development ...

AI Technical Summary

Problems solved by technology

However, there are still the following problems in the optical fiber amplifier made of the currently used doped rare earth amplifying fiber: ① the fiber used is relatively long (such as when the erbium-doped fiber is used for optical fiber amplification, it can be selected at 20m, 30m, etc.), which takes up a lot of space and is easily affected. The integration of optical fibers cannot be achieved due to external interference; ②In order to better improve the efficiency of the core to absorb pump light, the rare earth-doped amplifying optical fiber can adopt a non-circular inner cladding structure. The optical fiber with this structure has a complicated manufacturing process. Difficult to implement and expensive

In addition, its manufacturing size is inconsistent with ordinary optical fibers, it is not easy to connect with other devices, and the connection loss is large, which also limits its application in optoelectronic integration; ③The bandwidth of each doped fiber is limited (such as erbium-doped fiber based on silica fiber Amplifier gain bandwidth is about 30nm), so doped rare earth fibers of different bands appear, such as erbium-doped fiber (C-band 1530-1565nm, L-band 1570-1605nm), erbium-doped telluride fiber (1530-1610nm), doped Praseodymium fluoride fiber (1290-1320nm), thulium-doped fluoride fiber (1450-1485nm); ④In silica fiber, highly doped rare earth elements, such as erbium (generally doped with about 10 18 cm -3 ), there will be an up-conversion effect and an ion concentration effect, and the number of particles on the erbium metastable energy level will decrease, so increasing the concentration of rare earth elements will not increase the gain after a certain limit

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