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Silver alloy etching solution

A technology of silver alloy and etching solution, applied in the field of etching solution, can solve the problems of not having, not widely used in wafer or panel yellow light manufacturing process, low resistance, etc., and achieving the effect of novel composition

Inactive Publication Date: 2006-01-18
RITDISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, although the resistance value of silver alloys containing more than 80% silver is not as low as that of silver metal, its resistance value is much lower than that of chromium metal.
However, because silver alloys do not have appropriate etchant, they are not widely used in the yellowing process of wafers or panels

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-8

[0053] Mix hydrogen peroxide and nitric acid in the ratio of Table 1 below, and add water to 100 grams to prepare the etching solution with the following concentration. A silicon substrate with a silver alloy thin film is spin-coated, and a photoresist layer is coated on it; wherein the silver alloy thin film is formed on the silicon substrate by a sputtering method, and contains more than 98% silver, 0.9% Palladium and 1.0% copper. Subsequently, the silicon substrate was exposed to light to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 1, and the etching rate was measured. The results are shown in Table 1 below.

[0054] Example

[0055] After the etching was completed, the silicon substrate was inspected and the photoresist of the silicon substrate and the pattern was not damaged. Therefore, the etching solution only selectively etches the silver alloy.

Embodiment 9-23

[0057] Mix hydrogen peroxide and sulfuric acid in the ratio of Table 2 below, and add water to 100 grams to prepare the etching solution with the following concentration. A photoresist layer is coated on a silicon substrate with a silver alloy thin film by spin coating; wherein the silver alloy thin film is formed on the silicon substrate by a sputtering method, and contains more than 98% silver, 0.9 % Palladium and 1.0% copper. Subsequently, the silicon substrate was exposed to light to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 2, and the etching rate was measured. The results are shown in Table 2 below.

[0058] Example

[0059] After the etching was completed, the silicon substrate was inspected and the photoresist of the silicon substrate and the pattern was not damaged. Therefore, the etching solution only selectively etches the silver alloy.

Embodiment 24-32

[0061] Mix the solution with hydrogen peroxide, sulfuric acid, and ammonium acetate according to the ratio of Table 3 below, and add water to 100 grams to prepare the etching solution with the following concentration. A silicon substrate with a silver alloy thin film is spin-coated, and a photoresist layer is applied to it; wherein the silver alloy thin film is formed on the silicon substrate by a sputtering method, and contains more than 98% silver, 0.9% Palladium and 1.0% copper. Subsequently, the silicon substrate was exposed to light to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 3, and the etching rate was measured. The results are shown in Table 3 below.

[0062] Example

[0063] After the etching was completed, the silicon substrate was inspected and the photoresist of the silicon substrate and the pattern was not damaged. Therefore, the etching solution only selectiv...

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PUM

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Abstract

A silver alloy etching solution comprises 1-60 weight portions of hydrogen peroxide, 1-60 wt. portions of sulfuric acid, nitric acid or organic acid, and 5-90 wt. portions of water. The other silver alloy etching liquid comprises 1-60 weight portions of ammonium, 1-60 weight portions of hydrogen peroxide, and 0-96 portions of water.

Description

Technical field [0001] The present invention relates to an etching solution, especially an etching solution suitable for silver alloys. Background technique [0002] Current flat-panel display devices, especially organic electroluminescent displays, mostly use chromium metal as the wire material. However, because of the high resistance of chromium metal, researchers have been seeking to use metals with lower resistance as the wire material. In the past, it has been proposed to use silver as a wire material for flat-panel display devices, but because there is no suitable and stable etching solution composition, it has not been widely used. [0003] In recent years, in order to improve the performance of flat display devices, researchers are still focusing on how to reduce the resistance value of the wire material. Silver alloy is currently regarded as an appropriate wire material because its resistance value is lower than other metals. In addition, although the resistance value of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/30
Inventor 李旭峰姚信字邹忠哲施明忠叶添升吴朝钦
Owner RITDISPLAY
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