Method for making welding pad

Abstract

The invention provides a process for making welding pad on a substrate, the substrate includes a first dielectric layer and a first conducting layer, first forming a second conductive layer on the substrate surface, then proceeding a heat treatment process, to form a third conductive layer in the first and second conductive layer, at the same time oxygenizing completely the residual second conductive layer to form a second dielectric layer, lastly forming a third dielectric layer, and removing each of the dielectric layer above the first conductive layer.

Description

technical field [0001] The invention relates to a method for making a bonding pad, in particular to a method for making a self-aligning pad by using an alloy process and a photo-etching-process (PEP). The method of quasi-welding pad (self align bonding pad). Background technique [0002] In the structure of integrated circuits, when each transistor (transistor) or memory unit (cell) is completed, it must first be electrically connected to metal lines (metal lines) located in different metal layers, and then connected via each metal line. After the packaging is completed, the integrated circuit can be electrically connected to terminals through the pads and then electrically connected to external circuits. In the early days of integrated circuit development, Al-metal-SiO2 dielectric material has been the standard material used in metal interconnect design in the industry. Such a combination of materials has always been popular due to the support ...

AI Technical Summary

Problems solved by technology

However, the edge portion (edge ​​portion) 26 of the welding pad 16 produced in the prior art, because copper is in direct contact with the sheath layer 18, often has the phenomenon of outward diffusion of copper atoms (outdiffusion), thereby causing a short circuit (short circuit). )

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