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Process for preparing Si base Bi4 Ti3 O12 ferroelectric film

A ferroelectric thin film, thin film technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, circuits, electrical components, etc.

Inactive Publication Date: 2004-08-04
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, in the research of Si-based ferroelectric thin films, some research groups from Motorola, Siemens, Japan and South Korea and domestic Sichuan University, Fudan University, Tsinghua University, Shanghai Institute of Ceramics, Chinese Academy of Sciences, etc. have made some important progress. However, compared with the requirements of practical application, the quality and process consistency of the film still have a long way to go. For Si-based Bi 4 Ti 3 o 12 Research on the I-V characteristics, fatigue characteristics, Sol-Gel preparation process and silicon planar process compatibility of ferroelectric thin films needs to be further studied

Method used

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  • Process for preparing Si base Bi4 Ti3 O12 ferroelectric film
  • Process for preparing Si base Bi4 Ti3 O12 ferroelectric film
  • Process for preparing Si base Bi4 Ti3 O12 ferroelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] (1) Select a p-type single crystal Si substrate with a resistivity of 3Ω cm and a (100) crystal orientation as the substrate, and perform surface treatment and cleaning according to the requirements of the semiconductor plane process;

[0042] (2) adopt the following raw materials (its purity is analytically pure 99.9%) to prepare Bi 4 Ti 3 o 12 Sol:

[0043] Butyl titanate (C 16 h 36 o 4 Ti) 5.11ml

[0044] Glacial acetic acid (CH 3 COOH) 6.00ml

[0045] Bismuth nitrate (Bi(NO3) 3 ·5H 2 O) 10.67g

[0046] Acetylacetone (C 16 h 36 o 4 Ti) 38.00ml

[0047] The specific method is:

[0048] (2.1) Put the weighed bismuth nitrate into the beaker;

[0049] (2.2) adding glacial acetic acid;

[0050] (2.3) Stir with a magnetic stirrer to make it react evenly and fully until the bismuth nitrate is completely dissolved;

[0051] (2.4) Butyl titanate (C 16 h 36 o 4 Ti) put into another beaker;

[0052] (2.5) Add an appropriate amount of acetylacetone to make ...

Embodiment 2

[0063] Embodiment 2: (the purity of each raw material is required to be more than 99.9% of analytical purity)

[0064] 1) Select a p-type single crystal Si substrate with a resistivity of 5Ω cm and (100) crystal orientation as the substrate, and perform surface treatment and cleaning according to the requirements of the semiconductor planar process;

[0065] (3) adopt the following raw materials (its purity is analytically pure 99.9%) to prepare Bi 4 Ti 3 o 12 Sol:

[0066] Butyl titanate (C 16 h 36 o 4 Ti) 5.11ml

[0067] Glacial acetic acid (CH 3 COOH) 15.00ml

[0068] Bismuth nitrate (Bi(NO3) 3 ·5H 2 O) 10.40g

[0069] Acetylacetone (C 16 h 36 o 4 Ti) 32.00ml

[0070] The specific method is:

[0071] (2.1) Put the weighed bismuth nitrate into the beaker;

[0072] (2.2) adding glacial acetic acid;

[0073] (2.3) Stir with a magnetic stirrer to make it react evenly and fully until the bismuth nitrate is completely dissolved;

[0074] (2.4) Butyl titanate (C...

Embodiment 3

[0084] Embodiment 3: (the purity of each raw material is required to be more than 99.9% of analytical purity)

[0085] 1) Select a p-type single crystal Si substrate with a resistivity of 10Ω cm and (100) crystal orientation as the substrate, and perform surface treatment and cleaning according to the requirements of the semiconductor planar process;

[0086] (4) adopt the following raw materials (its purity is analytically pure 99.9%) to prepare Bi 4 Ti 3 o 12 Sol:

[0087] Butyl titanate (C 16 h 36 o 4 Ti) 5.11ml

[0088] Glacial acetic acid (CH 3 COOH) 30.00ml

[0089] Bismuth nitrate (Bi(NO3) 3 ·5H 2 O) 10.50g

[0090] Acetylacetone (C 16 h 36 o 4 Ti) 12.00ml

[0091] The specific method is:

[0092] (2.1) Put the weighed bismuth nitrate into the beaker;

[0093] (2.2) adding glacial acetic acid;

[0094] (2.3) Stir with a magnetic stirrer to make it react evenly and fully until the bismuth nitrate is completely dissolved;

[0095] (2.4) Butyl titanate (...

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Abstract

This invention provides a processing method of Bi1Ti3O12 silicon group ferroelectric water employing butyl titanic acid, glacial acetic acid, bismuth nitrate, and acetylacetone to make up Bi1Ti3O12 sol at the mole rate of 3.00:4.20-4.40 of bytyl titanic acid and bismuth nitrate, the volume percentages of glacial acetic acid, acetylacetone and butyl titanic acid and 10-80%:10-80%:10% separately, by selecting 100 crystal p-type monocrystalline silicon as the substrate, to put drops of sol on it and even it to a moisture wafer to be dried by a fire and annealing to form the desired thickenss of BIT ferroelectric chip by repeating the abore processions of evening gel drying treatment and annealing, which can be used in the process of accumulator with good comprehensive performance in the structure, ferroelectric and dielectric spheres.

Description

[0001] The invention belongs to the field of electronic functional film materials, and relates to a method for preparing a Si-based ferroelectric film, in particular to a Si-based Bi 4 Ti 3 o 12 Sol-Gel ("Sol-Gel") Preparation of Ferroelectric Thin Films. Background technique [0002] Ferroelectric crystals belong to a subfamily of dielectric crystals, piezoelectric crystals and pyroelectric crystals, so ferroelectric crystals must have dielectric, piezoelectric and pyroelectric properties in addition to ferroelectricity, and light-transmitting ferroelectrics also have With electro-optical properties. Due to the special dielectric, electro-optic, acousto-optic, photorefractive, nonlinear optics, pyroelectric and piezoelectric properties of ferroelectrics, it is a material with great commercial application prospects, so the application of ferroelectrics has been very early. It has attracted the attention of the physics and materials science circles. Since the 1970s, due to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/39
Inventor 于军王华王耘波周文利谢基凡
Owner HUAZHONG UNIV OF SCI & TECH
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