Semiconductor device

Abstract

An improved semiconductor device which prevents a short circuit between a wiring layer and a semiconductor substrate, caused by the penetration of a contact hole, will be provided. A lower conducting layer is formed on a second interlayer insulating film. A third interlayer insulating film covers lower conducting layer. A contact hole is formed in third interlayer insulating film in order to connect an upper conducting layer and lower conducting layer. A stopper layer of silicide or metal is formed below contact hole between the surface of a semiconductor substrate and lower conducting layer.

Description

technical field [0001] The present invention relates generally to semiconductor devices, and more particularly to an improved semiconductor device comprising a wiring layer capable of preventing the wiring layer from being short-circuited to a wiring layer of a different potential or to a semiconductor substrate. Background technique [0002] image 3 It is a sectional view of a conventional semiconductor device such as a semiconductor memory having a multilayer wiring structure. [0003] refer to image 3 , an interlayer insulating film 5 a is provided on the semiconductor substrate 1 . The first conductive layer 2 is provided on the interlayer insulating film 5a. An interlayer insulating film 5 b is provided on the interlayer insulating film 5 a so as to cover the first conductive layer 2 . The second conductive layer 3 is provided on the interlayer insulating film 5b. An interlayer insulating film 5 c is provided on the interlayer insulating film 5 b so as to cover the...

AI Technical Summary

Problems solved by technology

As a result, a so-called short-circuit problem occurs between a wiring layer and a wiring layer of a different potential, or between a wiring layer and a semiconductor substrate.

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