Carrier storage trench gate IGBT (Insulated Gate Bipolar Translator)

Abstract

The embodiment of the invention discloses a carrier storage trench gate IGBT (Insulated Gate Bipolar Translator). The first conduction type collector region, the second conduction type buffer region, the second conduction type drift region and the first conduction type body region are arranged on one side of the collector electrode; at least two gate trenches; a second conductive type source region and a carrier storage layer are arranged on the surface of the first conductive type body region surrounded by the first gate trench; the first conduction type drift region is provided with a shielding doped region, the shielding doped region is located between the second gate trench and the first gate trench, the depth of the shielding doped region is larger than the depth of the first gate trench and the depth of the second gate trench in the first conduction type drift region, and the shielding doped region surrounds the bottom of the second gate trench and the bottom of the first gate trench; an insulating layer; and an emitter. According to the invention, the concentration of the carrier storage layer can be greatly improved, the conductivity modulation effect is enhanced, the withstand voltage of the device is ensured while the conduction voltage drop of the device is reduced, and the reliability of the device is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductor power devices, and in particular, to a carrier storage trench gate IGBT. Background technique [0002] As a core power electronic device, the insulated gate bipolar thyristor (IGBT) is widely used in rail transit, smart grid, new energy vehicles because of its advantages of fast switching speed, low loss and simple driving circuit. and home appliances. [0003] In the prior art, a carrier storage trench gate bipolar transistor (Carrier Stored Trench Gate Bipolar Transistor, CSTBT) with a P-body region is formed by adding a layer of current carrier between the P-body region and the N-drift region. The sub-storage layer can enhance the conductance modulation effect, thereby reducing the turn-on voltage drop of the device. The higher the doping concentration of the carrier storage layer, the better the conductance modulation effect and the lower the on-voltage drop. How...

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Problems solved by technology

However, as the doping concentration of the carrier storage layer increases, the withstand voltage of the device will become lower and lower. Therefore, the structure of the CSTBT needs to be optimized and improved

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