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N-polarity GaN/AlGaN-based rectifier and preparation method thereof

A rectifier and polarity technology, which is applied in the field of rectifiers, can solve the problems of reduced stability and reliability of rectifiers, difficulty in preparing N-polar GaN thin films, and reduced concentration of two-dimensional electron gas, so as to reduce threading dislocations and improve positive polarity. Improvement of conduction characteristics and quality

Pending Publication Date: 2022-08-05
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation of N-polar GaN thin films is difficult, and the crystal quality still lags behind that of Ga-polar
On the one hand, the surface defects of the nitride can trap electrons as traps, resulting in a decrease in the two-dimensional electron gas concentration at the heterojunction interface; on the other hand, the accumulated dislocations can act as leakage channels of the device, making the rectifier stable and reliable decreased sex

Method used

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  • N-polarity GaN/AlGaN-based rectifier and preparation method thereof
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  • N-polarity GaN/AlGaN-based rectifier and preparation method thereof

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Embodiment 1

[0040] This embodiment provides a method for preparing an N-polar GaN / AlGaN-based rectifier, including the following steps:

[0041] (1) If figure 1 As shown, an AlN buffer layer 2, a double SiN insertion layer structure 3, an undoped AlGaN barrier layer 4 and an undoped GaN channel layer 5 are sequentially grown on the silicon carbide substrate 1 to obtain a rectifier epitaxial wafer;

[0042] Among them, the preparation of the double SiN insertion layer structure includes sequentially growing the lower SiN insertion layer, the AlGaN buffer layer and the upper SiN insertion layer on the AlN buffer layer. The deposition time of the lower SiN insertion layer and the upper SiN insertion layer is 30-50s and 160-180s;

[0043] In order to alleviate lattice mismatch and release stress, the Al composition of the AlGaN buffer layer is larger than that in the undoped AlGaN barrier layer;

[0044] The AlN buffer layer, the AlGaN buffer layer, the undoped AlGaN barrier layer and the und...

Embodiment 2

[0060] This embodiment provides a method for preparing an N-polar GaN / AlGaN-based rectifier, which specifically includes:

[0061] (1) If figure 1 As shown, an N-polar AlN buffer layer 2 with a thickness of 160 nm, a double SiN insertion layer structure 3 with a thickness of 500 nm, a non-doped N-polar AlGaN barrier layer 4 with a thickness of 300 nm, and a thickness of 25 nm are sequentially grown on the silicon carbide substrate 1. The undoped N-polar GaN layer 5 is obtained to obtain a rectifier epitaxial wafer;

[0062] Among them, the growth process of the double SiN insertion layer structure 3 is: growing the lower SiN insertion layer 50s on the N-polar AlN buffer layer 2, growing the AlGaN buffer layer on the lower SiN insertion layer, and then growing the upper SiN insertion layer on the AlGaN buffer layer. layer 160s; wherein the Al composition of the AlGaN buffer layer is greater than that of the undoped AlGaN barrier layer;

[0063] (2) Pretreatment is carried out...

Embodiment 3

[0072] This embodiment provides a method for preparing an N-polar GaN / AlGaN-based rectifier, which specifically includes:

[0073] (1) If figure 1 As shown, a 180 nm-thick N-polar AlN buffer layer 2, a 600-nm-thick double SiN intercalation layer structure 3, a 320-nm-thick undoped N-polar AlGaN layer 4, and a 40-nm-thick non-polar AlGaN layer were sequentially grown on the silicon carbide substrate 1. Doping the N-polar GaN layer 5 to obtain a rectifier epitaxial wafer;

[0074] Among them, the growth process of the double SiN insertion layer structure 3 is: growing the lower SiN insertion layer 50s on the N-polar AlN buffer layer 2, growing the AlGaN buffer layer on the lower SiN insertion layer, and then growing the upper SiN insertion layer on the AlGaN buffer layer. layer 180s;

[0075] (2) Pretreatment is carried out to the obtained rectifier epitaxial wafer: the rectifier epitaxial wafer obtained in step (1) is placed in acetone for ultrasonic treatment for 5 min and d...

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Abstract

The invention discloses an N-polarity GaN / AlGaN-based rectifier and a preparation method thereof. The rectifier comprises a rectifier epitaxial wafer, an ohmic contact electrode, a Si3N4 passivation layer and a Schottky contact electrode, wherein the ohmic contact electrode, the Si3N4 passivation layer and the Schottky contact electrode are arranged on the rectifier epitaxial wafer; the rectifier epitaxial wafer comprises an AlN buffer layer, a dual SiN insertion layer structure, a non-doped AlGaN barrier layer and a non-doped GaN channel layer which are grown on a silicon carbide substrate in sequence, the ohmic contact electrode and the Si3N4 passivation layer are both arranged on the non-doped GaN channel layer, the double SiN insertion layer structure comprises a lower SiN insertion layer, an AlGaN buffer layer and an upper SiN insertion layer which grow on the AlN buffer layer in sequence. According to the invention, the rectifier is prepared by adopting the N-polarity GaN / AlGaN heterojunction epitaxial wafer, and a double SiN insertion layer structure is designed, so that the high-performance rectifier with low turn-on voltage and high cut-off frequency can be realized.

Description

technical field [0001] The invention relates to the technical field of rectifiers, in particular to an N-polar GaN / AlGaN-based rectifier and a preparation method thereof. Background technique [0002] RF rectifier is the core device in the space wireless energy transmission system, and has a wide range of applications in military and civil fields such as satellite systems, aerospace vehicles, and household appliances. However, traditional Si-based devices face problems such as low breakdown field strength, large reverse leakage current, low thermal conductivity, and poor performance stability. The group III nitrides represented by GaN have the characteristics of large band gap, high breakdown voltage, high electron saturation rate, and can produce high density and high mobility in the heterojunction under the action of polarization effect. It is expected to realize high-performance RF rectifiers. However, the traditional Ga-polar GaN has insufficient threshold confinement ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/45H01L29/47H01L29/778H01L21/335
CPCH01L29/0615H01L29/45H01L29/47H01L29/778H01L29/66462
Inventor 王文樑李灏侯冬曼李国强林廷钧
Owner SOUTH CHINA UNIV OF TECH
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