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Rare earth ion doped chalcogenide gain glass and low-temperature synthesis preparation method thereof

A technology of rare earth ions and sulfur doping, which is applied in the field of infrared laser materials and its preparation, can solve the problems of high melting temperature, achieve the effects of reducing melting temperature, reducing safety risks, and reducing impurities

Pending Publication Date: 2022-06-24
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of low doping concentration of rare earth ions in As-S chalcogenide glass, high melting temperature, impurities in the chalcogenide glass melt, large scattering loss during use, and safety risks in the preparation process, thereby providing A kind of rare earth ion-doped chalcogenide gain glass and its low-temperature synthesis preparation method are disclosed. The low-temperature synthesis preparation process of chalcogenide glass based on the alloy method solves the problem caused by the high melting temperature of traditional rare earth-doped chalcogenide glass. series of questions

Method used

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  • Rare earth ion doped chalcogenide gain glass and low-temperature synthesis preparation method thereof
  • Rare earth ion doped chalcogenide gain glass and low-temperature synthesis preparation method thereof
  • Rare earth ion doped chalcogenide gain glass and low-temperature synthesis preparation method thereof

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Effect test

Embodiment 1

[0027] Example 1: A rare earth ion doped chalcogenide gain glass, the molar content of the raw material components is Ga: 0.8%, As: 38.2%, Sb: 1%, S: 60%, the rare earth element is Tm, doped The concentration is 1000 ppm. The process of preparing rare earth ion-doped chalcogenide gain glass according to the above-mentioned raw material components is as follows:

[0028] (1) Weigh Ga, As, Sb and Tm elemental raw materials with a purity of not less than 99.99% according to the formula, load the weighed raw materials into a quartz tube, and then evacuate the quartz tube, and the vacuum degree reaches 1 × 10 -3 After Pa, seal the quartz tube with oxyhydrogen flame;

[0029] (2) put the sealed quartz tube into a melting furnace, heat up to 700 ° C and melt for 8 hours, take out the quartz tube and cool to obtain an alloy containing rare earth elements;

[0030] (3) Load the alloy and the weighed sulfur with a purity of not less than 99.99% into a quartz tube, and then evacuate th...

Embodiment 2

[0033] Example 2: A rare earth ion doped chalcogenide gain glass, the molar content of the raw material components is Ga: 0.8%, As: 34.2%, Sb: 5%, S: 60%, the rare earth element is Dy, and the doped The concentration is 4000ppm. The process of preparing rare earth ion-doped chalcogenide gain glass according to the above components is as follows:

[0034] (1) Weigh Ga, As, Sb and Dy elemental raw materials with a purity of not less than 99.99% according to the formula, load the weighed raw materials into a quartz tube, and then evacuate the quartz tube, and the vacuum degree reaches 1 × 10 -3 After Pa, seal the quartz tube with oxyhydrogen flame;

[0035] (2) put the sealed quartz tube into a melting furnace, heat up to 700 ° C for melting for 8 hours, take out the quartz tube for cooling, and obtain an alloy containing rare earth elements;

[0036] (3) Put the alloy and sulfur that has been weighed and whose purity is not less than 99.99% into a quartz tube, and then vacuumi...

Embodiment 3

[0039] Example 3: A rare earth ion doped chalcogenide gain glass, the molar content of the raw material components is Ga: 0.8%, As: 30.2%, Sb: 9%, S: 60%, the rare earth element is Er, doped The concentration is 2000ppm. The process of preparing rare earth ion-doped chalcogenide gain glass according to the above components is as follows:

[0040] (1) Weigh Ga, As, Sb and Er elemental raw materials with a purity of not less than 99.99% according to the formula, load the weighed raw materials into a quartz tube, and evacuate the quartz tube until the degree of vacuum reaches 1×10 -3 After Pa, seal the quartz tube with oxyhydrogen flame;

[0041] (2) put the sealed quartz tube into a melting furnace, heat up to 700 ° C for melting for 8 hours, take out the quartz tube for cooling, and obtain an alloy containing rare earth elements;

[0042] (3) Load the alloy and the weighed sulfur with a purity of not less than 99.99% into a quartz tube, and then evacuate the quartz tube to a de...

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Abstract

The invention belongs to an infrared laser material and a preparation method thereof, and particularly relates to rare earth ion doped chalcogenide gain glass and a low-temperature synthesis preparation method thereof. According to the rare earth ion doped chalcogenide gain glass and the low-temperature synthesis preparation method thereof provided by the invention, a chalcogenide glass low-temperature synthesis preparation process based on an alloy method is adopted, and the problems that the doping concentration of rare earth ions of As-S chalcogenide glass is low, the melting temperature is high, impurities exist in chalcogenide glass melt, the scattering loss in the use process is large, and the service life is long are solved. Safety risks exist in the preparation process. Ga, As, Sb and S are used as main components, any rare earth element of Dy, Tm or Er is doped, and the preparation method comprises the steps of raw material weighing, vacuum sealing, rare earth doped alloy synthesis, sulfur adding and melting, quenching and annealing and the like. The obtained rare earth ion doped chalcogenide gain glass is subjected to infrared spectrum detection, and absorption peaks of Dy, Tm or Er ions are observed to determine that the added rare earth ions are dissolved in the glass.

Description

technical field [0001] The invention belongs to an infrared laser material and a preparation method thereof, in particular to a rare earth ion-doped chalcogenide gain glass and a low-temperature synthesis preparation method thereof. Background technique [0002] The mid-infrared laser light source is located in the transparent window of the atmosphere and covers the vibrational fingerprint spectrum of many molecules, so it has important applications in aerospace communication, radar detection, environmental monitoring and other fields. The main ways to obtain mid-infrared lasers are: semiconductor lasers, Raman fiber lasers, gas lasers, optical parametric oscillation lasers and rare earth doped solid-state lasers. Among them, rare earth-doped solid-state lasers have the advantages of good beam quality and high output power, and occupy an important position in high-performance lasers. However, there are few reports of gain ion-doped mid-infrared lasers in the band above 3 μm...

Claims

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Application Information

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IPC IPC(8): C03C3/32
CPCC03C3/321Y02P40/57
Inventor 许彦涛郭海涛崔健肖旭升张豪
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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