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Silica gel gas barrier film

A technology of gas barrier film and silica gel, which is applied in the direction of electrical components, gaseous chemical plating, coating, etc., and can solve the problems of insufficient flexibility and plasticity in chip-level packaging process, etc.

Inactive Publication Date: 2022-05-17
BENQ MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although it is known in the prior art that polymer material films such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) have better water and gas barrier properties, however, due to polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) The flexibility and plasticity of dicarboxylate (PET) or polyethylene naphthalate (PEN) are not enough to be used in chip scale packaging (Chip Scale Package, CSP) in high-end LED products

Method used

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Examples

Experimental program
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Effect test

preparation example 1

[0080] Preparation Example 1: The preparation method of linear polysiloxane (compound 1)

[0081] With 3499.92 grams (19.13 mole) of methylphenyl dimethoxysilane (phenylmethyldimethoxysilane, purchased from Hengqiao Industrial Co., Ltd., Taiwan, China), 288.48 grams (2.4 mole) of dimethyldimethoxysilane (Dimethyldimethoxysilane , purchased from Hengqiao Industrial Co., Ltd., Taiwan, China), and 317.28 grams (2.4mole) of methylvinyldimethoxysilane (Methylvinyldimethoxysilane, purchased from Liuhe Chemical Co., Ltd., Taiwan, China) was added to the reaction tank and stirred at room temperature to form a homogeneous mixed solution. This mixed solution is dripped in the sulfuric acid aqueous solution (5337.4 grams) of concentration 5% to obtain a reaction solution, then this reaction solution is heated to 75 ℃ to carry out hydrolysis, after the reaction is complete, extract with deionized water to make the organic layer reach neutral. properties, and finally the solvent is remove...

preparation example 2

[0083] Preparation example 2: the preparation method of the first silicone resin (compound 2)

[0084] 2776 grams (14 mole) of phenyl-trimethoxysilane (phenyl-trimethoxysilane, purchased from Liuhe Co., Ltd., Taiwan, China), 480.88 grams (4 mole) of dimethyldimethoxysilane (Dimethyldimethoxysilane, purchased from constant Bridge Industrial Co., Ltd., Taiwan, China), and 264.46 grams (2mole) of methylvinyldimethoxysilane (Methylvinyldimethoxysilane, purchased from Liuhe Chemical Co., Ltd., Taiwan, China) was placed in the reaction tank, at room temperature Stir to make a homogeneously mixed solution. Drop the mixed solution into 5% sulfuric acid aqueous solution to prepare a reaction solution, then heat the reaction solution to 75°C for hydrolysis, after the reaction is complete, extract with deionized water to make the organic layer neutral, and finally The solvent was removed to give the monohydrolyzate.

[0085] The above hydrolyzate, 21.39 grams (0.11 mole) of divinyltetr...

preparation example 3

[0086] Preparation example 3: the preparation method of the second silicone resin (compound 3)

[0087] 2379.4 grams (12 mole) of phenyltrimethoxysilane (Phenyltrimethoxysilane, purchased from Liuhe Chemical Co., Ltd., Taiwan, China), and 1118.4 grams (6 mole) of divinyltetramethyldisiloxane (Divinyltetramethyldisiloxane, purchased from (Liuhe Chemical Co., Ltd., Taiwan, China) was placed in a reaction tank and stirred at room temperature to obtain a uniform mixed solution. This mixed solution was dripped into 5% sulfuric acid aqueous solution (4547.16 grams) to prepare a reaction solution, and then the reaction solution was heated to 75°C for hydrolysis, and after the reaction was complete, it was extracted with deionized water to make The organic layer was neutralized, and finally the solvent was removed to obtain a hydrolyzate.

[0088] The above hydrolyzate, 1998 grams of toluene and 10 grams of potassium hydroxide were placed in a reaction tank, nitrogen gas was passed i...

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Abstract

The invention discloses a silica gel gas barrier film. The silica gel gas barrier film comprises a poly (ethylene terephthalate) film, a silica gel layer, a silica gel layer and a protective layer, the inorganic coating layer is configured on one surface of the polyethylene terephthalate film; and the first silica gel layer is configured on the other surface, opposite to the inorganic coating layer, of the polyethylene terephthalate film. The first silica gel layer is formed by curing a first curable silicone resin composition. The water vapor penetration rate (WVTR) of the silica gel gas barrier film is not greater than 0.5 gm <-2 > day <-1 >, the coefficient of thermal expansion (CTE) of the silica gel gas barrier film at 25-50 DEG C is between 5 ppm / DEG C and 10 ppm / DEG C, and the visible light penetration rate of the silica gel gas barrier film is greater than 93%.

Description

technical field [0001] The invention relates to a silicon gas barrier film, which can be used to package optical semiconductor devices, especially a silicon gas barrier film applicable to the package of Light Emitting Diode (LED). Background technique [0002] Compared with traditional lighting, Light Emitting Diode (LED) has the advantages of small size, high luminous efficiency, long life, high safety, fast operation response time, rich colors, no heat radiation and no mercury and other toxic substances. , so it is currently booming rapidly. Its applications are quite diverse, such as architectural lighting, consumer hand-held lighting, retail display lighting, residential lighting and so on. [0003] A general LED packaging structure includes a bracket, an LED chip disposed on the bracket, and packaging glue. Because silica gel has good properties such as heat resistance and light resistance, silica gel is often used as a packaging material for LEDs in the prior art. H...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J7/048C08J7/06C09D183/07C09D183/05C09D7/65H01L33/56C08L67/02
CPCC08J7/048C08J7/0423C08J7/06C09D183/04C09D7/65H01L33/56C08L2205/025C08L2205/035C08J2367/02C08J2483/07C08J2483/05C08L83/04C08J2483/04C09D183/14C08G77/54H01L2933/005C23C14/08C23C16/40C23C16/02C23C14/02C08J5/18C23C14/34C23C16/45525
Inventor 邓仕杰黄如慧
Owner BENQ MATERIALS CORP
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