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Preparation method, product and application of lead-free halogen microcrystal

A micro-crystal and lead-halogen technology, which is applied in the field of preparation of lead-free halogen micro-crystal, can solve the problems affecting the application value and poor stability of cesium-lead-bromine scintillator materials, and achieve easy operation, good thermal stability and light stability Good results

Pending Publication Date: 2022-05-13
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the toxicity of lead and the poor stability of cesium lead bromine materials, the practical application value of cesium lead bromine as scintillator materials has been greatly affected.

Method used

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  • Preparation method, product and application of lead-free halogen microcrystal
  • Preparation method, product and application of lead-free halogen microcrystal
  • Preparation method, product and application of lead-free halogen microcrystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Preparation of a Rb 2 AgCl 3 Lead-free halogen microcrystals, the specific preparation method is as follows:

[0035] (1) Mix and dissolve 0.1mmol (14.3mg) AgCl and 0.2mmol (24.2mg) RbCl in 2mL dimethyl sulfoxide, place on a heating platform at 60°C and heat for 4h until the solution is completely clear to obtain a precursor solution;

[0036] (2) After the solution is completely clarified, use isopropanol as the anti-solvent, and perform anti-solvent extraction according to the standard that 200 μL of the precursor solution is dissolved and dispersed into 4 mL of isopropanol;

[0037] (3) After the extraction, centrifuge at 9000rps for 5 minutes to obtain a precipitate, put it in a drying oven and dry it to get Rb 2 AgCl 3 Lead-free halogen microcrystalline.

Embodiment 2

[0039] Preparation of a Rb 2 AgCl 3 Lead-free halogen microcrystals, the specific preparation method is as follows:

[0040] (1) Mix and dissolve 14.1mg AgCl and 24.2mg RbCl in 2mL dimethyl sulfoxide, place on a heating platform at 60°C and heat for 5h until the solution is completely clear to obtain a precursor solution;

[0041](2) After the solution is completely clarified, use isopropanol as the anti-solvent, and perform anti-solvent extraction according to the standard that 200 μL of the precursor solution is dissolved and dispersed into 4 mL of isopropanol;

[0042] (3) After extraction, centrifuge at 9000rps for 5 minutes to obtain a precipitate, put it in a drying oven to dry to obtain Rb 2 AgCl 3 Lead-free halogen microcrystalline.

Embodiment 3

[0044] With the Rb prepared in embodiment 2 2 AgCl 3 Lead-free halogen microcrystals for the preparation of Rb 2 AgCl 3 Lead-free halogen microcrystalline thin film, the specific preparation method is as follows:

[0045] (1) Rb 2 AgCl 3 Pour the lead-free halogen micro-crystals into the mortar and grind until there are no large particles;

[0046] (2) Pour the glue into the mortar according to the volume-to-mass ratio of 1:20, mL:mg, Rb 2 AgCl 3 The lead-free halogen microcrystalline powder and glue are mixed and ground until the glue and powder are evenly distributed together, and there are no large particles, and the fine powder is evenly distributed in the glue;

[0047] (3) the mixed Rb 2 AgCl 3 - Spread the glue evenly, put it in a 100°C oven for 1-3 hours to cure.

[0048] figure 1 For the Rb prepared in Example 1 2 AgCl 3 The X-ray diffraction pattern of lead-free halogen microcrystals, the diffraction peaks are consistent with the standard XRD card; fig...

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Abstract

The invention relates to a preparation method of a lead-free halogen micron crystal as well as a product and application of the lead-free halogen micron crystal, and belongs to the technical field of preparation of the lead-free halogen micron crystal. The invention discloses a preparation method of a lead-free halogen micron crystal, which comprises the following steps: dissolving silver chloride (AgCl) and rubidium chloride (RbCl) in dimethyl sulfoxide, and extracting by an anti-solvent method to obtain the Rb2AgCl3 lead-free halogen micron crystal. The Rb2AgCl3 lead-free halogen microcrystal is prepared by using a normal temperature method and has the advantages of simple experimental steps and easiness in operation, compared with lead-containing halide, the prepared Rb2AgCl3 lead-free halogen microcrystal solves the problem of toxicity of lead, and particularly compared with cesium-lead-bromine, the luminous quantity of the Rb2AgCl3 lead-free halogen microcrystal prepared by the method is higher than that of cesium-lead-bromine under X rays when the Rb2AgCl3 lead-free halogen microcrystal is used as a scintillator material, and the service life of the Rb2AgCl3 lead-free halogen microcrystal is prolonged. And the process for preparing the micron crystal powder into the film is simple, and after the film is prepared, materials in the film are uniformly distributed, so that the imaging effect is better.

Description

technical field [0001] The invention belongs to the technical field of preparation of lead-free halogen micro-crystals, and relates to a preparation method of lead-free halogen micro-crystals as well as products and applications thereof. Background technique [0002] X-ray imaging is widely used in medical diagnosis, materials research and inspection in industry. CsI, Bi 4 Ge 3 o 12 (BGO), CdWO 4 and (Lu,Y) 2 SiO 5 (LYSO), as a traditional scintillator material, can be directly applied in X-ray imaging, and can convert high-energy photons into low-energy visible light, so that the resulting image can be finally displayed on a computer. However, the preparation conditions of these traditional scintillator materials are complicated, and need to be prepared under high temperature and vacuum environment, which increases the production cost. [0003] In recent years, all-inorganic cesium-lead-halogen materials have attracted widespread attention because of their advantages...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G5/00C01G5/02C09K11/61C09K11/02G01N23/04
CPCC01G5/006C01G5/02C09K11/616C09K11/02G01N23/04C01P2002/72C01P2004/03C01P2004/01C01P2004/04
Inventor 唐孝生罗伊何鹏赖俊安周佳儿安康
Owner CHONGQING UNIV
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