Electron transport material, preparation method thereof and photoelectric device

A technology of electron transport materials and conditions, applied in the field of optoelectronic devices, can solve the problems of poor electrical conductivity and electron transport properties of nano-ZnO semiconductor materials, etc.

Pending Publication Date: 2022-04-22
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide an electron transport material, its preparation method and optoelectronic device, aiming to solve the problem of poor electrical conductivity and electron transport property of the existing nano-ZnO semiconductor material to a certain extent

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  • Electron transport material, preparation method thereof and photoelectric device
  • Electron transport material, preparation method thereof and photoelectric device
  • Electron transport material, preparation method thereof and photoelectric device

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preparation example Construction

[0034] as attached figure 1 As shown, the second aspect of the embodiment of the present application provides a method for preparing an electron transport material, comprising the following steps:

[0035] S10. Obtain zinc oxide nanomaterials;

[0036] S20. Obtain a silane coupling agent, dissolve the silane coupling agent and the zinc oxide nanomaterial in the first organic solvent, perform a coupling reaction, and separate and obtain the modified zinc oxide nanomaterial;

[0037] S30. Dissolving the modified zinc oxide nanomaterial in a second organic solvent, adding a noble metal precursor and a reducing agent to carry out a coating reaction, and separating to obtain an electron transport material.

[0038] The preparation method of the electron transport material provided by the second aspect of the present application uses a silane coupling agent to modify the surface of the zinc oxide nanomaterial. The organic functional group in the silane coupling agent has binding pr...

Embodiment 1

[0105] An electron transport thin film, comprising the following preparation steps:

[0106] ① Add an appropriate amount of zinc chloride to 50mL of ethanol to form a solution with a concentration of 0.5M, stir and dissolve at 70°C. Add potassium hydroxide dissolved in 10mL ethanol lye (molar ratio, OH - : Zn 2+ =1.8:1, pH=12). Stirring was continued at 70 °C for 4 h to obtain a homogeneous solution. Subsequently, after the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of ethanol, and the steps of precipitation and dissolution were repeated three times, followed by drying to obtain ZnO nanoparticles.

[0107] ②Weigh an appropriate amount of ZnO into a flask, and add 50mL of absolute ethanol to it to form a solution with a concentration of 0.5M. Add 3-aminopropyltriethoxysilane (APTES) (molar ratio, ZnO:APTES=1:1) into the flask, stir and reflux at room temperature for 7 hours under an inert atmos...

Embodiment 2

[0111] An electron transport thin film, comprising the following preparation steps:

[0112] ① First, add an appropriate amount of zinc nitrate to 50mL of methanol to form a solution with a total concentration of 0.8M. Then stir and dissolve at 60°C, add sodium hydroxide dissolved in 10mL ethanol lye (molar ratio, OH - : Zn 2+ =1.8:1, pH=12). Stirring was continued at 60 °C for 4 h to obtain a homogeneous solution. Subsequently, after the solution is cooled, it is precipitated with heptane, and after centrifugation, it is dissolved with a small amount of methanol (repeat the operation and wash 3 times) to obtain ZnO nanoparticles.

[0113] ② Weigh an appropriate amount of ZnO into a flask, and add 50mL of absolute ethanol to it to form a solution with a concentration of 0.8M. Add aminopropyltrimethoxysilane (APS) (molar ratio, ZnO:APS=1:1.5) into the flask, stir and reflux at room temperature for 8h under an inert atmosphere. Subsequently, it was precipitated with heptane...

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Abstract

The invention belongs to the technical field of photoelectric devices, and particularly relates to an electron transport material which is of a core-shell structure and comprises a ZnO core and a precious metal shell layer wrapping the ZnO core. The electron transport material is of a core-shell structure, surface defects of ZnO are reduced through modification of the precious metal shell layer, trapping of current carriers by the surface defects of ZnO is inhibited, and therefore the electron transport performance of a ZnO core is improved. In addition, formation of the precious metal shell layer is equivalent to construction of a channel for rapid and effective transfer of stimulated electrons from the electron transport material to the quantum dot luminescent material. Meanwhile, the precious metal shell layer has the characteristic of surface plasmon resonance, and when the electron transport material is applied to a photoelectric device, local electromagnetic field enhancement can be induced through the surface plasmon resonance effect of the electron transport material, so that the output coupling of light and the composite light-emitting rate are increased, and the light-emitting efficiency of the device is effectively improved; therefore, the photoelectric performance of photoelectric devices such as a QLED is improved.

Description

technical field [0001] The application belongs to the technical field of optoelectronic devices, and in particular relates to electron transport materials, their preparation methods and optoelectronic devices. Background technique [0002] Semiconductor quantum dots have a quantum size effect, and people can achieve the required specific wavelength of light by adjusting the size of the quantum dots. In traditional inorganic electroluminescent devices, electrons and holes are injected from the cathode and anode respectively, and then recombine in the light-emitting layer to form excitons to emit light. [0003] In recent years, the use of inorganic semiconductors as electron transport layers has become a relatively hot research topic. Nano ZnO, TiO 2 , ZrO 2 It is a wide-bandgap semiconductor material. Due to its advantages such as quantum confinement effect, size effect and superior fluorescence characteristics, it has shown great promise in the fields of photocatalysis, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54H01L51/50H01L51/56B82Y30/00
CPCB82Y30/00H10K50/115H10K50/16H10K2102/00H10K71/00H10K85/00H10K50/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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