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Preparation method and application of chip with hydrophilic-super-hydrophobic composite interface

A super-hydrophobic and interfacial technology, applied in measuring devices, material analysis through electromagnetic means, instruments, etc., can solve problems such as unfavorable mass production, achieve the effect of increasing stability and durability, and improving hydrophobicity

Pending Publication Date: 2022-04-12
中科新芯纳米技术(常州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method is simple, it is not conducive to mass production in practice by artificially adding an aqueous solution of silver nanoparticles one by one to make hydrophilic points.

Method used

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  • Preparation method and application of chip with hydrophilic-super-hydrophobic composite interface
  • Preparation method and application of chip with hydrophilic-super-hydrophobic composite interface
  • Preparation method and application of chip with hydrophilic-super-hydrophobic composite interface

Examples

Experimental program
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Effect test

Embodiment 1

[0050] Select single-crystal silicon as the substrate, put the single-crystal silicon substrate into acetone, chloroform, ethanol, and ultrapure water successively for ultrasonic cleaning, take out the substrate to dry, and put the dried substrate into H 2 SO 4 :H 2 o 2 =In a mixed solution of 3:1, heat at 80°C for 30 minutes, rinse with water, and blow dry with nitrogen; evenly spin-coat positive-type photoresist on the substrate, the spin-coating condition is 500-5000 rpm, and the time is 5-5 50s; place the photolithography mask on the above substrate, wherein the size of the mask pattern is 100-2000μm, the pitch is 500-5000μm, and expose it under the ultraviolet lamp, the exposure time is 2-300s; the exposed substrate Put it into the developing solution for development, then take out the substrate, and dry it with nitrogen gas to obtain the photoresist dot matrix; use O to obtain the substrate 2 -Plasma was treated with a power of 200W for 10 minutes for hydrophilization...

Embodiment 2

[0052] Select a stainless steel sheet as the substrate, put the stainless steel sheet substrate into acetone, chloroform, ethanol, and ultrapure water for ultrasonic cleaning respectively, take out the substrate to dry, and put the dried substrate into H 2 SO 4 :H 2 o 2 =In a mixed solution of 3:1, heat at 100°C for 10 minutes, rinse with water, and blow dry with nitrogen; evenly spin-coat positive-type photoresist on the substrate, the spin-coating condition is 500-5000 rpm, and the time is 5-5 50s; place the photolithography mask on the above substrate, wherein the size of the mask pattern is 100-2000μm, the pitch is 500-5000μm, and expose it under the ultraviolet lamp, the exposure time is 2-300s; the exposed substrate Put it into the developing solution for development, then take out the substrate, and dry it with nitrogen gas to obtain the photoresist dot matrix; use O to obtain the substrate 2 -Plasma was treated with a power of 200W for 10 minutes for hydrophilizatio...

Embodiment 3

[0054] Select quartz as the substrate, place the quartz substrate in acetone, chloroform, ethanol, and ultrapure water for ultrasonic cleaning, take out the substrate and dry it, and use O 2 -Plasma was treated with a power of 200W for 10 minutes to perform hydrophilic treatment, rinsed with water, and dried with nitrogen; evenly spin-coated positive-type photoresist on the substrate, the spin-coating condition was 500-5000 rpm, and the time was 5 ~50s; place the photolithography mask on the above substrate, wherein the size of the mask pattern is 100-2000μm, the pitch is 500-5000μm, and expose it under the ultraviolet lamp, the exposure time is 2-300s; the exposure time is 2-300s; Put the substrate into the developing solution for development, then take out the substrate, and dry it with nitrogen gas to obtain the photoresist dot matrix; put the obtained substrate into H 2 SO 4 :H 2 o 2 = 3:1 mixed solution, heated at 80°C for 30min, rinsed with water, and blown dry with n...

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Abstract

The invention provides a preparation method and application of a chip with a hydrophilic-super-hydrophobic composite interface. The chip can be used for improving the crystallization uniformity of a sample and a matrix in MALDI (matrix-assisted laser desorption ionization) mass spectrometric detection and improving the reproducibility of mass spectrometric detection. The preparation method comprises the following steps: constructing a hydrophilic bare silicon area in the middle and a nano-structure super-hydrophobic area around a substrate on the substrate, dropwise adding a mixed solution of a matrix and a biological sample on the chip, and naturally airing at room temperature to obtain uniform matrix and sample co-crystallization particles. The chip disclosed by the invention can play a role in enriching a sample in mass spectrometry detection, and can also improve or even eliminate the influence caused by a coffee ring effect, improve co-crystallization of a matrix and the sample and improve the reproducibility of mass spectrometry detection at the same time.

Description

technical field [0001] The invention relates to the technical field of chip preparation, in particular to a preparation method and application of a chip with a hydrophilic-superhydrophobic composite interface. Background technique [0002] Matrix-assisted laser desorption ionization time-of-flight mass spectrometry (MALDI-TOF MS), as an emerging technology with high specificity, high sensitivity, high accuracy, fast analysis speed, and simultaneous detection of multiple indicators, is gradually being accepted by the clinical medical market. Recognize and accept. In MALDI detection, it is necessary to deposit the mixed solution of the sample and the matrix on the sample target, dry and crystallize naturally at room temperature, and then send the sample target into the mass spectrometer for detection. In this process, the size of the deposition area of ​​the sample on the sample target and the uniformity of the co-crystallization of the sample and the matrix on the sample tar...

Claims

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Application Information

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IPC IPC(8): G01N27/64
Inventor 曾周芳王燕东
Owner 中科新芯纳米技术(常州)有限公司
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