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Method for producing photovoltaic cell

A technology of photovoltaic cells and electrodes, applied in the direction of photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., which can solve problems such as incomplete satisfaction

Pending Publication Date: 2022-04-08
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, this prior art method is not entirely satisfactory in terms of passivation of structures

Method used

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  • Method for producing photovoltaic cell
  • Method for producing photovoltaic cell
  • Method for producing photovoltaic cell

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Embodiment Construction

[0081] For the sake of simplicity, elements that are the same or perform the same function have been denoted by the same reference numerals in the various embodiments.

[0082] A subject of the invention is a method for manufacturing a photovoltaic cell comprising the steps of:

[0083] a) setting a structure, said structure comprising:

[0084] - a substrate 1 based on crystalline silicon having a first surface 10 and an opposite second surface 11;

[0085] - a first dielectric layer 2 comprising boron atoms and formed on the first surface 10 of the substrate 1;

[0086] - a tunnel oxide film 3 formed on the second surface 11 of the substrate 1;

[0087] - a polysilicon layer 4 formed on the tunnel oxide film 3;

[0088] - a second dielectric layer 5 comprising phosphorus and / or arsenic atoms and formed on the polysilicon layer 4;

[0089] b) apply heat treatment to the structure in order to:

[0090] - allowing boron atoms to diffuse from the first dielectric layer 2 be...

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Abstract

The method comprises the following steps: a) providing a structure comprising:-a substrate (1) based on crystalline silicon; a first dielectric layer (2) comprising boron atoms and formed on a first surface (10) of the substrate (1); -a tunnel oxide film (3) formed on a second surface (11) of the substrate; a polysilicon layer (4) formed on the tunnel oxide film (3); a second dielectric layer (5) comprising phosphorus and / or arsenic atoms and formed on the polycrystalline silicon layer (4); b) applying a heat treatment to the structure so as to:-diffuse the boron atoms under the first surface (10) of the substrate (1) to form a first doped semiconductor region (100); and diffusing the phosphorus and / or arsenic atoms into the polycrystalline silicon layer (4) in order to dope the polycrystalline silicon layer (4).

Description

technical field [0001] The invention relates to the technical field of photovoltaic cells. The invention is particularly suitable for the manufacture of photovoltaic cells of the PERT ("Passivated Emitter Rear Totally-diffused" in English) type. Background technique [0002] A known prior art method for the manufacture of photovoltaic cells, disclosed notably in document FR 3 035 740, comprises the following steps: [0003] a 0 ) sets a structure, the structure comprising: [0004] - a substrate based on crystalline silicon having a first surface and an opposite second surface; [0005] - a first dielectric layer comprising boron atoms and formed on the first surface of the substrate; [0006] - a second dielectric layer comprising phosphorus and / or arsenic atoms and formed on the second surface of the substrate; [0007] b 0 ) apply heat treatment to the structure in order to: [0008] - diffusing boron atoms from the first dielectric layer below the first surface of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0368H01L31/0288H01L31/0216H01L21/225
CPCH01L31/0288H01L31/1864H01L21/2254H01L31/02167H01L31/03682H01L31/068H01L31/1804Y02E10/546Y02E10/547Y02P70/50
Inventor 拉斐尔·卡巴尔伯纳黛特·格朗热
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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