Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device and method for synthesizing nano nitride powder by using thermal plasma

A technology of thermal plasma and nitride, which is applied in the field of plasma applications, can solve the problems of expensive alkyl substances, difficulty in controlling powder particle size, unfavorable batch production, etc., and achieve fast reaction speed, fast reaction speed and high production capacity efficiency effect

Pending Publication Date: 2022-04-08
SOUTHWESTERN INST OF PHYSICS
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the preparation methods of high-performance nitride powders, such as carbothermal reduction method, self-propagating high-temperature synthesis method, chemical vapor deposition method, and sol-gel method, all have their own shortcomings, such as high cost and possible particle size Uneven and other defects
Although the carbothermal reduction method is easy to form and sinter, the synthesized powder needs secondary decarburization, and the cost is high. The self-propagating high-temperature synthesis and the sol-gel method have a fast reaction speed and low cost, but it is difficult to control the particle size of the powder during the reaction process. The chemical vapor deposition process is controllable, but the use of alkyl substances is expensive, which is not conducive to industrial mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for synthesizing nano nitride powder by using thermal plasma
  • Device and method for synthesizing nano nitride powder by using thermal plasma
  • Device and method for synthesizing nano nitride powder by using thermal plasma

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] In this embodiment, nano-aluminum nitride AlN is used as nano-nitride to synthesize nano-aluminum nitride powder, which specifically includes the following steps:

[0034] Step 1. Place metal raw materials

[0035] Put aluminum powder with a particle size between 2-5 μm into the crucible made of aluminum nitride through the metal material inlet of the nitride crucible.

[0036] The structure of the plasma furnace for synthesizing aluminum nitride powder in this embodiment, such as figure 1 As shown, the plasma furnace crucible shown is made of aluminum nitride crucible, and three 100kW DC arc plasma torches are evenly distributed around it.

[0037] Step 2. Vacuumize the inner cavity of the nitride crucible for background replacement

[0038] After the aluminum powder material is put in, close all valves of the plasma synthesis nitriding system and turn on the vacuum pump group to pump the system vacuum to less than 3×10 -3 Pa, until it reaches 2~3×10 -3 Fill N into...

Embodiment 2

[0049] In this embodiment, nano-Si 3 N 4 As nano-nitrides, nano-Si 3 N 4 The synthesis of powder specifically comprises the following steps:

[0050] Step 1. Place metal raw materials

[0051] Silicon powder with a particle size between 2-5 μm is put into the crucible made of silicon nitride through the metal material inlet of the nitride crucible.

[0052] The structure of the plasma furnace for synthesizing silicon nitride powder in this embodiment, such as figure 1 As shown, the plasma furnace crucible shown is made of silicon nitride crucible, and three 100kW DC arc plasma torches are evenly distributed around it.

[0053] Step 2. Vacuumize the inner cavity of the nitride crucible for background replacement

[0054] After the silicon powder material is put in, close all valves of the plasma synthesis nitriding system and turn on the vacuum pump group to pump the system vacuum to less than 3×10 -3 Pa, until it reaches 2~3×10 -3 Fill N into the furnace after Pa 2 To...

Embodiment 3

[0065] In this embodiment, nano-GaN is used as nano-nitride to synthesize nano-GaN powder, which specifically includes the following steps:

[0066] Step 1. Place metal raw materials

[0067] Gallium powder with a particle size between 2-5 μm is put into the crucible made of gallium nitride through the metal material inlet of the nitride crucible.

[0068] The structure of the plasma furnace for synthesizing gallium nitride powder in this embodiment, such as figure 1 As shown, the plasma furnace crucible shown is made of gallium nitride crucible, and three 100kW DC arc plasma torches are evenly distributed around it.

[0069] Step 2. Vacuumize the inner cavity of the nitride crucible for background replacement

[0070] After the gallium powder material is put in, close all valves of the plasma synthesis nitriding system and turn on the vacuum pump group to pump the system vacuum to less than 3×10 -3 Pa, until it reaches 2~3×10 -3 Fill N into the furnace after Pa 2 To atmo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of thermal plasma application, and particularly relates to a device and method for synthesizing nano nitride powder through thermal plasmas, and the device comprises a nitride crucible, a metal material feeding port, a nitride steam outlet and a direct-current arc thermal plasma torch, a metal material feeding port and a nitride steam outlet are formed in the top of the nitride crucible, an inner cavity of the nitride crucible is communicated with the metal material feeding port and the nitride steam outlet, and the top of the nitride crucible is closed except for the metal material feeding port and the nitride steam outlet; and a plurality of direct-current arc plasma torches are uniformly arranged on the periphery of the nitride crucible. According to the method, the technical bottleneck of an existing nitride powder material preparation process is effectively overcome, the average particle size of the nano nitride powder synthesized through the method is 200 nm or below, the shape is spherical or linear, and the method has the advantages of being high in synthesis efficiency, low in production cost and the like.

Description

technical field [0001] The invention belongs to the technical field of thermal plasma application, and in particular relates to a device and method for synthesizing nano-nitride powder by thermal plasma. Background technique [0002] With the continuous development of high-output semiconductors, higher requirements are placed on circuit substrates for semiconductor mounting. The heat brought by dense circuits requires substrate materials with good thermal conductivity. At the same time, the replacement of semiconductor chips also affects the performance of substrates. put forward higher requirements. Nitride ceramic materials have excellent thermal conductivity. For example, the theoretical value of thermal conductivity of aluminum nitride is about 320W / m K. It is regarded as a new generation of electronic packaging materials, especially suitable for the packaging of microwave vacuum tubes and hybrid power switches. It is a large Ideal substrate material for large-scale int...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01J19/08
Inventor 陈伦江童洪辉程昌明金凡亚但敏聂军伟黄熠
Owner SOUTHWESTERN INST OF PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com