Semiconductor device electrode manufacturing method and semiconductor device

Abstract

The invention discloses an electrode manufacturing method of a semiconductor device and the semiconductor device. The method comprises the steps that after the surface of a basic structure of the semiconductor device is planarized, a hard compound layer is formed on the surface of the basic structure, then the hard compound layer is etched, so that a local area of the surface of the basic structure is exposed, the exposed local area is roughened, and the surface of the basic structure of the semiconductor device is formed. The method comprises the following steps of: exposing a local area of a hard compound layer, forming a metal lamination layer on the exposed local area, thermally expanding at least one metal layer in the metal lamination layer through annealing and pushing the hard compound layer, and cooling the metal lamination layer so as to form a gap between the metal lamination layer and the hard compound layer, finally, the top end face and the side wall of the metal lamination layer are covered with continuous inert metal layers through the gaps, a metal lamination structure is formed, and the inert metal layers can well protect the metal lamination layer from being corroded. The electrode manufactured by the method is good in corrosion resistance, and the performance of a semiconductor device can be effectively guaranteed.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to an electrode manufacturing method of a semiconductor device and the semiconductor device. Background technique [0002] Usually, the outer protective layer of electrodes or conductive pad structures of semiconductor devices is SiO 2 However, due to the increasing demand for LED chips or other semiconductor device product application markets, the chip size continues to decrease, so that the traditional silicon oxide coating material can no longer protect the metal electrode layer or metal pad well. structure, especially on semiconductor devices (such as outdoor display screens) that are easily exposed to the outside, the general market environment may require long-term exposure to air and water environments. Under long-term changes in temperature and water vapor erosion, this will result in SiO 2 The peripheral protective layer of the semiconductor devic...

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Problems solved by technology

[0002] Usually, the outer protective layer of electrodes or conductive pad structures of semiconductor devices is SiO 2 However, due to the increasing demand for LED chips or other semiconductor device product application markets, the chip size continues to decrease, so that the traditional silicon oxide coating material can no longer protect the metal electrode layer or metal pad well. structure, especially on semiconductor devices (such as outdoor display screens) that are easily exposed to the outside, the general market environment may require long-term exposure to air and water environments. Under long-term changes in temperature and water vapor erosion, this will result in SiO 2 The peripheral protective layer of the semiconductor device made of material falls off from the metal electrode or metal pad structure. After the silicon dioxide layer falls off, the electrode will be affected by the external air and moisture, which will cause oxidation and corrosion of the electrode, which will seriously affect the semiconductor chip. performance

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