Preparation method of silicon/nickel-cobalt-iron photo-anode

Abstract

The invention discloses a silicon / nickel-cobalt-iron photo-anode preparation method, nickel sulfate, cobalt sulfate and ferrous sulfate are dissolved in deionized water to form a uniformly mixed electro-deposition solution, inert gas is used for maintaining the existence of iron elements in the solution in the form of ferrous ions, and in the under-potential deposition process, the content of the ferrous ions in the solution is reduced; divalent nickel-cobalt-iron elements form a compact nickel-cobalt-iron alloy film on the surface of a silicon electrode, a silicon anode is effectively protected to avoid corrosion and passivation, the outermost layer of the nickel-cobalt-iron alloy film is oxidized to generate a complex nickel-cobalt-iron (hydrogen) oxide at the initial stage of photoelectric water decomposition, and the photoelectric water decomposition efficiency is improved. More surface active sites are provided for photoelectrochemical water decomposition to accelerate the photoelectrochemical water decomposition process so as to accelerate the generation of hydrogen, the silicon / nickel-cobalt-iron photo-anode synthesized by the method can be prepared on a large scale in a controllable, repeatable and rapid manner by using the existing electro-deposition equipment in a factory, and the method is suitable for industrial production. And no toxic chemical reagent is added in the whole synthesis process, the conditions are mild, and no pollution is caused.

Description

technical field [0001] The application belongs to the field of electrode materials, and in particular relates to a method for preparing a silicon / nickel-cobalt-iron photoanode. Background technique [0002] Compared with other semiconductor photocatalysts, silicon is very abundant on the earth, easy to obtain and low in price. In addition, its 1.12eV bandgap width matches the sunlight spectrum very well, and it can obtain good photoresponse in visible light and even far infrared light region. , which is conducive to the realization of efficient utilization of solar energy, has been widely used in the photovoltaic industry, and has great potential application value in the field of new photoelectric catalysis technologies. [0003] However, the "pinning effect" of silicon itself leads to the slow charge transfer kinetics on its surface, which limits the separation and transfer of photogenerated carriers; and as a photoanode reacts in alkaline solution, its surface is extremely...

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Problems solved by technology

However, these methods have more or less shortcomings. For example, the laser pulse deposition method is not easy to prepare a large-area film, and it is difficult to realize industrial production; the deposition rate of the atomic layer deposition method is too slow, and the thickness of ten cycles can only reach the nanometer level. There is no effective deposition process for materials such as silicon germanium; the gas plasma in the magnetron sputtering process is not stable, which affects the formation of the film; the electron beam evaporation method may cause secondary damage caused by high-energy electrons Secondary electrons may ionize residual gas molecules and may also cause pollution

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