N polar surface AlGaN-based ultraviolet photoelectric detector epitaxial structure and preparation method thereof

Abstract

The invention discloses an epitaxial structure of an N-polar surface AlGaN-based ultraviolet photoelectric detector and a preparation method of the epitaxial structure. The N polar surface AlGaN-based ultraviolet photoelectric detector epitaxial structure comprises a non-doped N polar surface AlN buffer layer, a carbon-doped semi-insulated N polar AlN buffer layer, a carbon-doped N polar surface component gradient Al < y > Ga < 1-y > N buffer layer and a non-doped N polar surface Al < x > Ga < 1-x > N layer which are sequentially grown on a silicon substrate, wherein x is equal to 0.5 to 0.8, and y is equal to 0.75 to 0.95. According to the N-polar surface AlGaN-based ultraviolet photoelectric detector epitaxial structure provided by the invention, the power and the detection rate of an AlGaN-based ultraviolet detector are enhanced, the photoelectric responsivity of the ultraviolet photoelectric detector is improved, and the processing difficulty of subsequent devices is effectively reduced; according to the preparation method provided by the invention, the dislocation density and the surface roughness of the N-polarity AlGaN epitaxial layer grown by high-temperature MOCVD (Metal Organic Chemical Vapor Deposition) are reduced.

Description

technical field [0001] The invention relates to the technical field of photoelectric device detectors, in particular to an epitaxial structure of an N-polar surface AlGaN ultraviolet photodetector and a preparation method thereof. Background technique [0002] Group III nitride materials represented by GaN are hot materials for new-generation optoelectronic devices. Due to their wide band gap, fast working speed, excellent electrical and thermal conductivity and extremely low loss, they are regarded It is an excellent alternative material to realize the miniaturization of high-performance optoelectronic devices. However, the epitaxial structure of the traditional metal-polar AlGaN photodetector is limited by defects such as weak high-temperature thermal stability and the influence of the internal polarization electric field of the material. Polar AlGaN materials are considered as alternative materials for traditional metallic polar AlGaN-based photodetectors. Since AlGaN o...

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Problems solved by technology

However, the epitaxial structure of the traditional metal-polar AlGaN photodetector is limited by defects such as weak high-temperature thermal stability and the influence of the internal polarization electric field of the material. Polar AlGaN materials are considered as alternative materials for traditional metallic polar AlGaN-based photodetectors

Since AlGaN on the N-polar surface has an opposite built-in electric field direction and a more active surface state than the traditional metal polar surface, the growth of AlGaN materials on the N-polar surface cannot effectively improve its surface quality at this stage.

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