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Composite film sensor for measuring heat flux density and pressure and preparation method thereof

A thin-film sensor and heat flux technology, applied in the direction of measuring force, measuring heat, measuring devices, etc., can solve the problems of time-consuming disassembly, transformation and installation, the inability to guarantee simultaneous output of two parameters, and different response times to achieve output The effect of good signal effect, increased air expansion, and simple signal collection

Pending Publication Date: 2022-03-18
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The heat flow and pressure at the stagnation point have different response times according to different measurement methods. During the process, the heat flow and pressure at the stagnation point need to be measured multiple times and adjusted continuously, especially for the irregular surface of the measured object. One probe is installed on the bracket in one measurement, and only one of the parameters can be measured
Moreover, when converting the measurement parameters, it takes a lot of time to disassemble, change and install the probe, often the measurement time is much shorter than the time to replace the probe, and the simultaneous output of the two parameters cannot be guaranteed, and the efficiency is relatively low

Method used

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  • Composite film sensor for measuring heat flux density and pressure and preparation method thereof
  • Composite film sensor for measuring heat flux density and pressure and preparation method thereof
  • Composite film sensor for measuring heat flux density and pressure and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0038] refer to figure 1 , a composite film sensor for measuring heat flux density and pressure, including a capacitive film pressure sensing part and a heat flux sensing part. Among them, the capacitive thin-film pressure sensing part includes a doped silicon substrate 4, a dielectric insulating layer 5, a polysilicon layer 6 and a pressure-sensitive substrate 7 are sequentially deposited below the doped silicon substrate 4, and the pressure-sensitive substrate 7 and the doped silicon There is a vacuum sealed cavity 9 between the substrates 4 , and the pressure sensitive substrate 7 is provided with a capacitor lower plate 8 , and the capacitor lower plate 8 is located in the vacuum sealed cavity 9 . Above the capacitive film pressure sensing part, there are thermopile layer base 3, thermopile layer 2 and thermal resistance layer 1 arranged in sequence from bottom to top, and thermopile layer base 3, thermopile layer 2 and thermal resistance layer 1 form a heat flux density s...

Embodiment 2

[0049] A method for preparing a composite thin film sensor for measuring heat flux density and pressure, the main structural parameters of which are:

[0050] The thickness of the upper plate of the capacitor is 8.5 μm to 15 μm, the diameter is 5 mm to 7.5 mm, and the height of the vacuum sealed chamber 9 is 7 μm to 10 μm. The line width of the thermocouple material deposition is less than 150 μm, the line length is 7 mm to 15 mm, and the thickness is 1 μm to 2 μm to ensure the continuity of the thermocouple.

[0051] Combine below Figure 4 The preparation method of the present invention is described in detail:

[0052] Step 1. Take an n-type single-crystal silicon wafer 14, and clean the single-crystal silicon wafer 14 with a standard cleaning method.

[0053] Step 2. Deposit an oxide layer on the single crystal silicon wafer 14 and perform photolithography. The oxide layer is used as a chemical barrier layer, and wet anisotropic silicon etching is performed with KOH solu...

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Abstract

The invention discloses a composite film sensor for measuring heat flux and pressure and a preparation method thereof. The composite film sensor comprises a capacitive film pressure sensing part and a heat flux sensing part, the capacitive thin film pressure sensing part comprises a doped silicon substrate, a dielectric insulating layer, a polycrystalline silicon layer and a pressure-sensitive substrate are sequentially arranged below the doped silicon substrate from top to bottom, a vacuum sealing cavity is formed between the pressure-sensitive substrate and the doped silicon substrate, a capacitor lower polar plate is arranged on the pressure-sensitive substrate and located in the vacuum sealing cavity, and the dielectric insulating layer, the polycrystalline silicon layer and the pressure-sensitive substrate are arranged in the vacuum sealing cavity. The doped silicon substrate right above the vacuum sealing cavity is a capacitor upper polar plate; the heat flow density sensing part comprises a thermopile layer substrate, a thermopile layer and a thermal resistance layer; the thermal resistance layer comprises a thermal resistance cold end and a thermal resistance layer hot end, and the thermopile layer comprises a first thermocouple and a second thermocouple which are sequentially connected and arranged at an interval. Copper and constantan are adopted as thermocouple electrode materials, the materials are easy to obtain, the production cost is low, and the method is suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of thin film sensors, and in particular relates to a composite thin film sensor for measuring heat flux density and pressure and a preparation method thereof. Background technique [0002] Heat flow and pressure are commonly used parameters for various equipment in different industries, such as various industrial furnaces, heat transmission pipelines, aerospace, etc., all of which need to detect heat loss and pressure in local areas of their equipment. During the working process of industrial equipment, the heat flow and pressure at the stagnation point of some important components are particularly important parameters. The heat flow and pressure at the stagnation point have different response times according to different measurement methods. During the process, the heat flow and pressure at the stagnation point need to be measured multiple times and adjusted continuously, especially for the irregular surfac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D21/02G01L1/14G01K7/02
CPCG01D21/02G01L1/142G01K7/02
Inventor 方续东梁鹏程方子艳赵立波田边吴晨孙昊邓武彬高博楠吴俊侠王淞立朱楠孙林蒋庄德
Owner XI AN JIAOTONG UNIV
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