Lateral double-diffused metal oxide semiconductor field effect transistor and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductors, and provides a lateral double-diffused metal oxide semiconductor field effect transistor and a manufacturing method thereof. The lateral double-diffused metal oxide semiconductor field effect transistor comprises a substrate, a gate region, a source region, a drain region, a P-type body region, and an N-type well region, a P-type well region and an N-type drift region which are positioned on the substrate, and further comprises a P-type drift region formed by ion implantation, wherein the P-type drift region is located in the N-type well region, and a preset distance exists between the P-type drift region and the P-type body region. According to the invention, the P-type drift region is added in the N-type well region, the contact surface of the P-type drift region and the N-type well region forms a PN junction, and the P-type drift region and the N-type drift region form a dual RESURF structure, so that the surface electric field of the device is reduced, higher breakdown voltage can be borne, and lower on-resistance can be maintained.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a lateral double-diffused metal oxide semiconductor field effect transistor and a method for manufacturing the lateral double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] Double-diffused metal oxide semiconductor field effect transistor (Double-diffused MOS, referred to as DMOS) has the characteristics of high withstand voltage, low power consumption, high current driving capability, etc., and is widely used in power management circuits. There are two main types of double diffused metal oxide semiconductor field effect transistors, vertical double diffused metal oxide semiconductor field effect transistor (Vertical Double-diffused MOSFET, referred to as VDMOSFET) and lateral double diffused metal oxide semiconductor field effect transistor (LateralDouble-diffused MOSFET) MOSFET, referred to as LDMOSFET). [0003] For LDMOSFET, ...

AI Technical Summary

Problems solved by technology

Generally, the breakdown voltage can be increased by increasing the channel length and the length of the drift region, but this will increase the area and on-resistance of the LDMOSFET chip

Due to the contradictory relationship between high breakdown voltage and low characteristic on-resistance, existing LDMOSFETs cannot meet the requirements of the application

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