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Thin film preparation system

A technology for thin film preparation and thin film deposition device, applied in the field of thin film preparation system based on vacuum environment, can solve problems such as unusable materials and elements, no reliable and stable evaporation source, and overall device damage.

Active Publication Date: 2022-01-11
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current solid evaporation device has the following problems: 1) There is no reliable and stable evaporation source for low vapor pressure molecules, which makes many materials and elements unusable; 2) It is impossible to precisely control the molecular weight of the evaporation and absorption of the sample; 3) The overall Device prone to damage

Method used

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example 1

[0097] Coal is used as a raw material to generate liquid benzene, a precursor material to be evaporated, and graphene is produced by using the liquid benzene, wherein the liquid benzene is a low vapor pressure liquid material. Specifically, such as figure 1 As shown, the precursor preparation device, that is, the distillation device, is used to generate liquid benzene, the precursor material to be evaporated, from coal. The liquid benzene flows into the storage device through the second pipeline, and the liquid benzene is evaporated by the temperature control device of the evaporation control device to form gaseous benzene. Molecules, using a control mechanism to control the rate at which gaseous benzene molecules pass into the film deposition device through the first pipeline, wherein the film deposition device is chemical vapor deposition equipment. Gaseous benzene molecules were prepared as graphene films using chemical vapor deposition equipment. Among them, the growth pa...

example 2

[0100] Using the thin film preparation system of the embodiment of the present invention, a molecular beam epitaxy thin film deposition device is used to prepare an ordered nitrogen-doped graphene material using a low vapor pressure pentachloropyridine material.

[0101] Since the evaporation temperature of the pentachloropyridine material is lower than room temperature in a vacuum environment, the traditional molecular beam epitaxy method cannot be directly controlled by the evaporation of the k-cell evaporation source, and the condensed pentachloropyridine molecules destroy the vacuum chamber. Using the thin film preparation system of the present invention, the pentachloropyridine material is heat-treated through the temperature control device of the storage device, and the evaporation rate of the pentachloropyrimidine molecule is controlled by the evaporation control device, and the pentachloropyridine molecule is directly adsorbed on Cu(111) at room temperature On the surfa...

example 3

[0103] Utilize the thin film preparation system of the embodiment of the present invention, wherein the thin film deposition device adopts the molecular beam epitaxy thin film deposition device, utilizes chlorine molecule to be at room temperature and under the ultra-high vacuum environment (background vacuum is better than 1×10 -7 Pa) into the Cu (111) substrate (vacuum of 1 × 10 -5 Pa, 5 minutes), prepare Cl / Cu(111) alloy material at room temperature. In an ultra-high vacuum environment at room temperature, chlorine molecules are close to a liquid state. The traditional gas release method is difficult to control, and the storage device and the evaporation control device of the thin film preparation system of the present invention can be used to accurately control the dosage of chlorine molecules released in an ultra-high vacuum environment (can be accurately controlled at 5×10 -7 to 1×10 -1 Pa range), the scanning electron microscope image of the prepared Cl / Cu(111) alloy ...

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Abstract

The invention provides a thin film preparation system. The thin film preparation system comprises a storage device, an evaporation control device and a thin film deposition device, wherein the storage device is used for storing a to-be-evaporated precursor material; the evaporation control device is located in the storage device and used for controlling the to-be-evaporated precursor material to be evaporated to form precursor molecules in a vacuum environment; and the thin film deposition device communicates with the storage device and is used for receiving the precursor molecules and preparing a thin film by utilizing the precursor molecules in the vacuum environment. The evaporation control device comprises a temperature control device and a control mechanism, wherein the temperature control device is located at the bottom of the storage device and used for evaporating the to-be-evaporated precursor material; and the control mechanism is arranged at the upper part of the storage device and is used for controlling the evaporation rate of the to-be-evaporated precursor material.

Description

technical field [0001] The invention relates to the field of thin film material preparation, in particular to a thin film preparation system based on a vacuum environment. Background technique [0002] In recent years, with the improvement of material preparation technology, more and more material preparation relies on vacuum environment. At present, there are mainly the following methods for vacuum material growth: 1) molecular beam epitaxy (MBE, Molecular Beam Epitaxy) and various evaporation equipment; 2) magnetron sputtering; 3) laser-assisted deposition; 4) chemical vapor deposition ; 5) Atomic layer deposition, etc. [0003] At present, the methods for preparing evaporation materials in a vacuum environment mainly have the following characteristics: 1) The grown materials are mainly atoms or molecules with high vapor pressure, that is, materials with an evaporation temperature greater than 200°C. The design of the evaporation source is also mainly suitable for materi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/54C23C14/06C23C16/26C23C16/52C30B23/02C30B25/02C30B25/16C30B28/12C30B28/14C30B29/10C30B29/52
CPCC23C14/24C23C14/545C23C14/06C23C16/26C23C16/52C30B25/02C30B28/14C30B29/10C30B25/16C30B23/02C30B28/12C30B29/52
Inventor 张汇罗超杰
Owner UNIV OF SCI & TECH OF CHINA
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