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Lead telluride quantum dots and preparation method and application thereof

A technology of lead telluride and quantum dots, which is applied in chemical instruments and methods, electrical components, nanotechnology, etc., can solve the problems of simple preparation methods of lead telluride quantum dots that have not been reported by anyone, and the influence of material intrinsic characteristics. Wide range of applications, convenient use, good dispersion effect

Pending Publication Date: 2021-12-07
HANGZHOU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the presence of ligands often has a significant impact on the intrinsic properties of the material, and the facile preparation of PbTe quantum dots without ligand coverage has not been reported yet.

Method used

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  • Lead telluride quantum dots and preparation method and application thereof
  • Lead telluride quantum dots and preparation method and application thereof
  • Lead telluride quantum dots and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] In this embodiment, the lead telluride quantum dots prepared in nitrogen methyl pyrrolidone solvent, the specific steps are as follows:

[0044] 1) Under nitrogen protection, add 500 mg of lead telluride powder to 500 ml of nitrogen methyl pyrrolidone solvent, use probe ultrasonic (600 watts) for about 8 hours in an ice-water bath environment, and then use water bath ultrasonic (350 watts) ) for about 48 hours, and the temperature of the water bath was kept constant at 10°C.

[0045] 2) After the ultrasound is completed, the lead telluride quantum dots are collected by the method of fractional centrifugation, which mainly includes: first adopting a centrifugation rate of 8000 rpm, centrifuging for 30 minutes, and taking the upper layer solution; Centrifuge for 30 minutes, and take the bottom pellet.

[0046] 3) For the precipitated lead telluride quantum dots obtained after fractional centrifugation, the solvent was removed by means of vacuum drying. The temperature of...

Embodiment 2

[0051] The lead telluride quantum dots prepared in this embodiment in dimethylformamide solvent, the specific steps are as follows:

[0052] 1) Under nitrogen protection, 400 mg of lead telluride powder was added to 200 milliliters of dimethylformamide solvent, and probe ultrasound (800 watts) was used for about 6 hours in an ice-water bath environment, followed by water bath ultrasound (250 watts) Watts) for about 72 hours, the temperature of the water bath was kept constant at 10°C.

[0053] 2) After the ultrasound is completed, the lead telluride quantum dots are collected by the method of fractional centrifugation, which mainly includes: first adopting a centrifugal rate of 9000 rpm, centrifuging for 25 minutes, and taking the upper layer solution; The centrifugation rate is centrifuged for 25 minutes, and the bottom pellet is taken.

[0054] 3) For the lead telluride quantum dot precipitation obtained after fractional centrifugation, the solvent was removed by means of v...

Embodiment 3

[0058] The lead telluride quantum dots prepared in this embodiment in dimethylformamide solvent, the specific steps are as follows:

[0059] 1) Under nitrogen protection, 5000 milligrams of lead telluride powder was added to 2000 milliliters of dimethylformamide solvent, and probe ultrasound (800 watts) was used for about 8 hours in an ice-water bath environment, followed by water bath ultrasound (350 watts) Watts) for about 72 hours, the temperature of the water bath was kept constant at 10°C.

[0060] 2) After the ultrasound is completed, the lead telluride quantum dots are collected by the method of fractional centrifugation, which mainly includes: first adopting a centrifugation rate of 9000 rpm, centrifuging for 30 minutes, and taking the upper layer solution; Centrifuge for 30 minutes, and take the bottom pellet.

[0061] 3) For the lead telluride quantum dot precipitation obtained after fractional centrifugation, the solvent was removed by means of vacuum drying. The t...

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Abstract

The invention discloses a preparation method of lead telluride quantum dots, which comprises the following steps: continuously introducing inert gas, adding lead telluride powder into a solvent, carrying out probe ultrasonic treatment for 6-12 hours at a water bath temperature of 10-15 DEG C, carrying out water bath ultrasonic treatment for 48-72 hours, centrifuging, and carrying out vacuum drying to obtain the lead telluride quantum dots. The preparation method is simple and efficient, the impurity amount of the prepared lead telluride quantum dots is small, the size distribution is uniform, and the invention further discloses the lead telluride quantum dots prepared through the preparation method of the lead telluride quantum dots. The lead telluride quantum dot is uniform in size, the characteristic absorption peak in an ultraviolet visible-near infrared spectrum is 450-550 nanometers, and the lead telluride quantum dot can be used as an active material in a photoelectrochemical photoelectric detector.

Description

technical field [0001] The invention belongs to the technical field of nanometer material preparation and specifically designs a lead telluride quantum dot and a preparation method thereof. Background technique [0002] Nanowire is a one-dimensional structure whose lateral size is at the nanoscale and vertically unlimited. According to the different materials, it can be divided into metal nanowires, semiconductor nanowires and insulator nanowires. Because of its unique thermal, optical, electrical and magnetic properties, it has a wide range of applications in the fields of microprocessors, micro sensors, new optoelectronic devices and information storage. Quantum dots are a zero-dimensional nanostructure, generally considered to be nanoparticles with a particle size of less than 20nm. Due to its large specific surface area, more prominent quantum confinement effect, quantum size effect and macroscopic tunnel effect, it has potential application value in the fields of biome...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88B82Y20/00B82Y40/00H01L31/0352
CPCC09K11/88B82Y20/00B82Y40/00H01L31/035218Y02P70/50
Inventor 高凌锋邱化玉尹守春
Owner HANGZHOU NORMAL UNIVERSITY
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