Conductive film gas separation type etching process

Abstract

The invention discloses a conductive film gas separation type etching process, and belongs to the technical field of etching. A plurality of gas separation microspheres are doped in etching ink, a magnetic field is intermittently applied below a conductive film, the gas separation microspheres are forced to intermittently extrude the etching ink, the etching ink is in full contact with the conductive film for etching, then the etching ink is heated and dried, and meanwhile, the action of releasing gas by the gas separation microspheres is triggered, so that the gas is filled into the gap to facilitate stripping of the etching ink and reduce the stripping strength of the etching ink after film forming, along with release of the gas, the gap of the etching ink is filled with the magnetic substance, then the magnetic field is transferred to the position above the conductive film, under the magnetic attraction effect of the magnetic substance, uniform multi-point stripping force is generated on the film, stripping of the film is accelerated, stripping is easy, the residual phenomenon is not prone to occurring, and meanwhile damage to a conductive circuit can be avoided.

Description

technical field [0001] The invention relates to the technical field of etching, and more specifically, relates to a gas ion etching process for a conductive film. Background technique [0002] Etching, English is Etch, it is a very important step in semiconductor manufacturing process, microelectronic IC manufacturing process and micro-nano manufacturing process. It is a main process of pattern processing associated with lithography. The so-called etching, in fact, is understood in a narrow sense as photolithography etching. First, the photoresist is subjected to photolithography exposure treatment by photolithography, and then the part to be removed is etched by other means. Etching is the process of selectively removing unwanted materials from the surface of a silicon wafer by chemical or physical methods, and its basic goal is to correctly replicate the mask pattern on the glue-coated silicon wafer. With the development of micro-manufacturing technology, in a broad sens...

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Problems solved by technology

[0004] However, in the actual operation process, since the thickness of the etching ink is only tens of microns, the thickness of the formed film is also extremely thin. During the peeling process, it is easy to be partially broken and cannot be completely peeled off. The follow-up needs to be done with a scraper or other means. Mechanical peeling is not only difficult to operate, but also easy to cause damage to the conductive circuit. After the thickness of the etching ink is thickened, although it is not easy to break during the peeling process, the difficulty of peeling also increases, and it is difficult to effectively peel off.

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