Processing method and device for improving quality of silicon carbide substrate

Abstract

The invention discloses a processing method and device for improving the quality of a silicon carbide substrate, and belongs to the technical field of semiconductor material cleaning. The device comprises an upper shell and a lower shell, and a silicon carbide substrate is placed between the upper shell and the lower shell, so that a closed first gas source cavity and a closed second gas source cavity are respectively formed between the silicon carbide substrate and the upper shell and between the silicon carbide substrate and the lower shell; a first gas inlet and a first gas outlet are formed in the first gas source cavity, a second gas inlet and a second gas outlet are formed in the second gas source cavity, and clean gas flows to the upper surface and the lower surface of the silicon carbide substrate after entering the first gas source cavity and the second gas source cavity to be buffered. And the air flows out of the first air outlet and the second air outlet respectively. When the device is used for cleaning the silicon carbide substrate, the surface consistency of the C surface and the Si surface of the silicon carbide substrate can be improved, and then the epitaxial quality is improved.

Description

technical field [0001] The application relates to a processing method and device for improving the quality of a silicon carbide substrate, belonging to the technical field of semiconductor material cleaning. Background technique [0002] Silicon carbide is a typical wide bandgap semiconductor material and one of the representatives of the third generation of semiconductor materials after silicon and gallium arsenide. Silicon carbide materials have excellent characteristics such as high thermal conductivity, high breakdown field strength, and high saturation electron mobility, and have become one of the popular materials for preparing high-temperature, high-frequency, high-power and radiation-resistant devices. [0003] Epitaxy technology is the core technology in the preparation process of silicon carbide-based devices. The quality of epitaxy directly determines the key technical indicators such as performance, life, and stability of silicon carbide-based devices, and plays ...

AI Technical Summary

Problems solved by technology

[0004] The processing of silicon carbide substrates improves the consistency of the substrate surface quality and facilitates the epitaxial growth of large-scale silicon carbide substrates, but the cutting, grinding, polishing, and washing processes in the processing of the substrate surface inevitably destroy the The original growth information on the bottom surface, and a large number of particles will remain on the substrate surface, which cannot be effectively removed by traditional cleaning methods, especially the residual particles of processing raw materials are strongly adsorbed on the substrate surface, and the existence of these particles increases the roughness of the substrate surface. Seriously affect epitaxial quality, induce quality defects such as micropipes, polytypes, dislocations, stacking faults, carrot defects, triangles, and step bundles

In addition, due to the large difference in the physical properties of the C surface and the Si surface of the silicon carbide substrate, the particles on the C surface are more difficult to remove than those on the Si surface. Under the same cleaning conditions, the number of residual particles on the C surface will be much larger than that on the Si surface. This difference will also have a certain impact on the epitaxial quality, which in turn affects the overall performance of SiC-based devices.

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