A femtosecond laser-based preparation method for cracked nano-gap structure

A femtosecond laser and nano-slit technology, applied in the field of laser applications, can solve the problems of high cost, cumbersome process, and low efficiency

Active Publication Date: 2022-07-15
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of high cost, low efficiency and cumbersome process in the traditional nano-slit processing method, and provide a method for preparing a crack-type nano-slit structure based on femtosecond laser

Method used

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  • A femtosecond laser-based preparation method for cracked nano-gap structure
  • A femtosecond laser-based preparation method for cracked nano-gap structure
  • A femtosecond laser-based preparation method for cracked nano-gap structure

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Embodiment Construction

[0029] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0030] like figure 1 , a femtosecond laser-based fabrication method for cracked nano-slits. First, a linearly polarized femtosecond laser (center wavelength 800 nm) was irradiated to a liquid crystal spatial light modulator (SLM) at a small angle. In this example, a spatial shaper is used to transform the light field intensity profile of the incident laser from a Gaussian to a bimodal beam, and its phase is expressed as follows:

[0031]

[0032] The spatially shaped femtosecond laser passes through two equal focal lengths (f 1 =f 2 = 500mm) optical lens composed of 4f optical system to carry out beam phase transfer, to avoid the diffraction and distortion of the laser phase due to long-distance propagation. In the 4f system, the distance from the SLM liquid crystal surface to the lens 1 should be equal to the focal length of the lens, the distance bet...

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Abstract

The invention relates to a preparation method of a crack-type nano-slit structure based on a femtosecond laser, and belongs to the technical field of laser application. The invention transforms the traditional Gaussian femtosecond laser beam into a double-peak or multi-peak beam through the space domain shaping technology. Based on the femtosecond laser-induced material amorphization and the femtosecond laser-induced shock wave phenomenon, a structure with multiple stress concentrations is induced on the silicon surface. Amorphous silicon etch mask. Such an etching mask with a stress-concentrating structure is the key to the formation of nanocrack propagation during wet etching. In the subsequent wet etching process, under the influence of solution undercutting, the etching mask with stress concentration structure releases the stress due to being etched into a suspended state, and at the same time, nanometers are generated at the stress concentration place under the action of the surface tension of the solution. The cracks propagate, forming nano-gap structures of extremely small size (below 10 nm).

Description

technical field [0001] The invention relates to a preparation method of a crack-type nano-slit structure based on a femtosecond laser, and belongs to the technical field of laser application. Background technique [0002] The unique ability of nanoslit structures to manipulate matter (photons, electrons, chemical molecules, biomass, etc.) in a very small space makes it useful in the fields of near-field optics, microelectronic circuits, biological or chemical sensing, etc. Unique and important application value. In particular, when the structure size of the nanoslit reaches below 10 nm, the structure size is comparable to that of a single molecule, which is expected to be applied to the preparation of molecular electrodes. At present, relatively mature nanostructure preparation methods such as electron beam lithography and focused ion beam direct writing can achieve reliable preparation of nanoslit structures, but their processing costs are high, and it is still difficult t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B82Y40/00
CPCB81C1/00515B81C1/00539B81C1/00388B82Y40/00
Inventor 姜澜周世鹏李晓炜高帅黄骥
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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