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A method and device for wireless photoelectrochemical mechanical polishing of semiconductor wafers

A photoelectrochemical and mechanical polishing technology, which is applied in semiconductor/solid-state device manufacturing, grinding devices, circuits, etc., can solve problems such as inability to process, inability to directly connect to photoelectrochemical systems, etc.

Active Publication Date: 2022-03-29
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since there are two types of semiconductor wafers, one is a self-supporting wafer in which all parts are conductive, and the other is an epitaxially grown wafer with a non-conductive substrate, and the latter cannot be directly connected to the photoelectrochemical system, so this technology The program cannot process the latter

Method used

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  • A method and device for wireless photoelectrochemical mechanical polishing of semiconductor wafers
  • A method and device for wireless photoelectrochemical mechanical polishing of semiconductor wafers
  • A method and device for wireless photoelectrochemical mechanical polishing of semiconductor wafers

Examples

Experimental program
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Embodiment 1

[0045] Embodiment 1 Semiconductor wafer wireless photoelectrochemical mechanical polishing device

[0046] figure 1 A schematic diagram of a wireless photoelectrochemical mechanical polishing device for semiconductor wafers provided by the present invention: comprising a polishing head (2), a semiconductor wafer (3), a polishing pad (4), a polishing disc (5), and a polishing liquid nozzle (10) , conductive slip ring (9), positive and negative electrode bus wires (7), ultraviolet light source (8), DC power supply (11) and polishing liquid recovery tank (1); wherein, the polishing pad and the polishing disc have the same The through holes arranged in a honeycomb array; the polishing pad is pasted on the bottom of the polishing disc; a pair of positive and negative electrodes (6) are arranged on each through hole bottom wall of the polishing disc, and the positive and negative electrodes Incorporate the positive and negative electrode bus lines arranged on the top of the polishi...

Embodiment 2

[0062] Use the wireless photoelectrochemical mechanical polishing device for semiconductor wafers described in Example 1 to process semiconductor wafers, wherein a polishing disc (2.2 cm in thickness) and a polishing pad (SUBA800) with a diameter of 23 cm are selected according to the Fibonacci array Arrange 131 through holes with a diameter of 0.6 cm; the structure of the photoelectrochemical electrolytic cell used is consistent with the description in the examples. The specific steps of the method for wireless photoelectrochemical mechanical polishing of semiconductor wafers are as follows: the non-intentionally doped n-type gallium nitride wafer of the sapphire substrate is fixed on the polishing head with wax, the diameter of the wafer is 50.8cm, and the thickness of gallium nitride is 5μm, the crystal plane to be processed is Ga plane; the pressure between the fixed polishing disc and the wafer is 6.5psi; the polishing liquid is continuously dripped to the polishing disc a...

Embodiment 3

[0064] The semiconductor wafer processing is carried out by using the semiconductor wafer wireless photoelectrochemical mechanical polishing device described in Embodiment 1. Fix the non-intentionally doped n-type gallium nitride self-supporting wafer on the polishing head with wax. The diameter of the wafer is 50.8cm, the thickness of gallium nitride is 230μm, and the crystal plane to be processed is the Ga plane. according to figure 1 The schematic diagram of the processing device used, each component is installed in the corresponding position, and the pressure between the fixed polishing disc and the wafer is 6.5psi. The polishing liquid is continuously dripped to the polishing disk at a drop rate of 80mL / s. The pH value of the polishing liquid is 1, the conductivity is 1s / m, and it contains 10wt% SiO with an average diameter of 25nm. 2 Abrasive particles; power on the motor so that the polishing disc and the wafer fixed on the polishing head are rotated in the same direct...

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Abstract

Semiconductor wafer wireless photoelectrochemical mechanical polishing method: fix the wafer on the polishing head; paste the polishing pad on the bottom of the polishing plate with the same diameter; set a pair of positive and negative electrodes on the bottom wall of the through hole, and merge them into the two bus lines on the top of the plate , connected to the positive and negative terminals of the power supply through a conductive slip ring; during processing, ultraviolet light is irradiated to the wafer through the through hole; the polishing liquid is dripped into the through hole to form a wafer surface, polishing liquid layer and positive and negative electrodes at the bottom. In the photolytic cell, the electrode and the wafer are separated by a polishing pad; after applying voltage, the wafer surface at the bottom of the photolytic cell is in the electric field between the two electrodes, and is oxidized into a soft surface oxide film according to the principle of bipolar electrochemical; Co-rotation of the disc / pad with the wafer allows all surfaces of the wafer to alternate evenly between the photoelectrochemical oxidation and mechanical rubbing steps. The device designed by the invention can efficiently and high-quality process various semiconductor wafers such as gallium nitride wafers with non-conductive sapphire as substrates under normal temperature and pressure, and has great economic significance and popularization value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to a method and device for wireless photoelectrochemical mechanical polishing of semiconductor wafers. Background technique [0002] The third-generation compound semiconductor gallium nitride and silicon carbide have the characteristics of good thermal conductivity, high breakdown electric field and fast electron saturation rate, and are suitable for making high-temperature, high-frequency and radiation-resistant high-power devices. Manufacturing devices from wafers requires frequent polishing processes. At present, the main technology is chemical mechanical polishing (CMP). The processing mechanism is to use the mechanical friction of polishing pads and abrasives while chemically oxidizing the wafer to form a soft surface oxide layer. Remove the oxide layer. However, gallium nitride and silicon carbide differ from other semiconductors in that their chemistry i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/10B24B37/04B24B37/005C25F3/30C25F7/00H01L21/04H01L21/306H01L21/67
CPCB24B37/10B24B37/042B24B37/0056B24B37/005C25F3/30C25F7/00H01L21/0475H01L21/30625H01L21/67092
Inventor 时康乔立青欧李苇
Owner XIAMEN UNIV
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