Preparation method of carbon defect type carbon nitride material for photocatalytic nitrogen fixation

A carbon nitride and carbon defect technology, which is applied in the field of preparation of carbon-defective carbon nitride materials, can solve the problems of low dispersion, high recombination rate, low electrical conductivity, etc., and achieves reduced recombination rate, short production cycle, The effect of reducing production costs

Pending Publication Date: 2021-07-09
WUHAN UNIV
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  • Application Information

AI Technical Summary

Problems solved by technology

However, carbon nitride (g-C 3 N 4 )'s low dispersion, low conductivity and high recombination rate seriously affect the photocatalytic performance, but its conduction band potential is higher than that of N 2 / NH 3 The reduction potential is more negative, making N 2 Reduced NH 3 become possible

Method used

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  • Preparation method of carbon defect type carbon nitride material for photocatalytic nitrogen fixation
  • Preparation method of carbon defect type carbon nitride material for photocatalytic nitrogen fixation
  • Preparation method of carbon defect type carbon nitride material for photocatalytic nitrogen fixation

Examples

Experimental program
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Effect test

Embodiment 1

[0037] 1. Put 20g of urea in a 100ml covered quartz crucible and put it into a muffle furnace for calcination. The calcination temperature is 550°C, the holding time is 4 hours, and the heating rate is 5°C / min;

[0038] 2. Grind for 30 minutes to obtain finely divided carbon nitride powder;

[0039] 3. The second calcination: spread the above-mentioned carbon nitride evenly in the porcelain boat, the thickness should not exceed 2mm, put it into the muffle furnace for calcination, the calcination temperature is 520°C, the holding time is 2 hours, and the heating rate is 5°C / min;

[0040] 4. The third calcination: spread the above-mentioned carbon nitride evenly in the porcelain boat, the thickness should not exceed 2mm, put it into the muffle furnace for calcination, the calcination temperature is 520°C, the holding time is 2 hours, and the heating rate is 5°C / min.

Embodiment 2

[0042] 1. Put 20g of urea in a 100ml covered quartz crucible and put it into a muffle furnace for calcination. The calcination temperature is 530°C, the holding time is 2 hours, and the heating rate is 2°C / min;

[0043] 2. Grind for 30 minutes to obtain finely divided carbon nitride powder;

[0044] 3. The second calcination: spread the above-mentioned carbon nitride evenly in the porcelain boat, the thickness should not exceed 2mm, put it into the muffle furnace for calcination, the calcination temperature is 550°C, the holding time is 4 hours, and the heating rate is 2°C / min;

[0045]4. The third calcination: spread the above-mentioned carbon nitride evenly in the porcelain boat, the thickness should not exceed 2mm, put it into the muffle furnace for calcination, the calcination temperature is 550°C, the holding time is 4 hours, and the heating rate is 2°C / min.

Embodiment 3

[0047] 1. Put 20g of urea in a 100ml covered quartz crucible and put it into a muffle furnace for calcination. The calcination temperature is 520°C, the holding time is 3 hours, and the heating rate is 3°C / min;

[0048] 2. Grind for 30 minutes to obtain finely divided carbon nitride powder;

[0049] 3. The second calcination: spread the above-mentioned carbon nitride evenly in the porcelain boat, the thickness should not exceed 2mm, put it into the muffle furnace for calcination, the calcination temperature is 530°C, the holding time is 3 hours, and the heating rate is 3°C / min;

[0050] 4. The third calcination: spread the above-mentioned carbon nitride evenly in the porcelain boat, the thickness should not exceed 2mm, put it into the muffle furnace for calcination, the calcination temperature is 530°C, the holding time is 3 hours, and the heating rate is 3°C / min.

[0051] Such as figure 1 Shown, g-C 3 N 4 For bulk carbon nitride, g-C 3 N 4 -V is carbon-deficient carb...

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Abstract

The invention discloses a preparation method of a carbon defect type carbon nitride material for photocatalytic nitrogen fixation. The mesoporous carbon nitride which is loose in structure and has more surface carbon defects is obtained by taking urea as a precursor through a high-temperature stripping method. Through control of an atomic scale structure and construction of surface defects, the photocatalytic activity of the prepared carbon defect type carbon nitride on ammonia conversion is greatly improved compared with that of bulk phase g-C3N4. By utilizing a thin layer structure, more surface carbon vacancies and a mesoporous structure, the light absorption capacity of a visible light region can be enhanced, and the photo-generated charge separation efficiency can be improved. What is worthy of noting is that the engineering carbon vacancies greatly promote adsorption and activation of nitrogen molecules, the nitrogen fixation activity of the defect ultrathin g-C3N4-V (carbon defect type carbon nitride) material is improved, and the preparation method is simple, easy to implement, rapid and convenient and has universality.

Description

technical field [0001] The invention relates to the field of preparation of inorganic functional materials, in particular to a method for preparing a photocatalytic nitrogen-fixing carbon-deficient carbon nitride material. Background technique [0002] Nitrogen is the most abundant element in the air and one of the most important elements in living organisms. Nitrogen and its compounds are widely used in production and life. [0003] At present, the industrial synthesis of ammonia still relies on the Haber-Bosch reaction. Since the Haber-Bosch reaction cannot solve its shortcomings such as high energy consumption and high pollution, it is imminent to find a green and sustainable ammonia synthesis technology. In contrast, photocatalytic nitrogen reduction is a solar-driven reduction of nitrogen to produce ammonia. This method can be carried out under normal temperature and pressure environment, so the photocatalytic nitrogen fixation technology is a very promising ammonia ...

Claims

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Application Information

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IPC IPC(8): C01B21/082B01J27/24B01J35/10
CPCC01B21/0605B01J27/24C01P2002/72C01P2004/03C01P2004/04C01P2002/82C01P2006/40B01J35/39B01J35/60
Inventor 曾玉彬定明月叶小兰石姝彤
Owner WUHAN UNIV
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