Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of porous Cu-SN based ultra-thin grinding wheel for chip scribing and its preparation method

A porous, cu-sn technology, used in manufacturing tools, metal processing equipment, grinding/polishing equipment, etc., can solve the problem that ultra-thin grinding wheel thinning is difficult to carry out, cannot further improve the cutting quality, and reduce the self-efficacy of ultra-thin grinding wheels. Sharpening ability and other problems, to achieve the effect of improving self-sharpening ability, improving cutting quality, and improving abrasive holding force

Active Publication Date: 2022-05-03
HUAQIAO UNIVERSITY
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the mechanically embedded abrasive must ensure sufficient coating thickness, it is difficult to continue thinning the ultra-thin grinding wheel; on the other hand, Cu-based binders often need to improve the connection of mechanically embedded abrasives by increasing the density of the metal bond. Strong, dense carcass reduces the self-sharpening ability of the ultra-thin grinding wheel, resulting in the inability to further improve the cutting quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of porous Cu-SN based ultra-thin grinding wheel for chip scribing and its preparation method
  • A kind of porous Cu-SN based ultra-thin grinding wheel for chip scribing and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Chip slicing with porous Cu-Sn base ultra-thin grinding wheel preparation method, the ultra-thin grinding wheel is composed of superhard abrasive and metal-based carcass, the ultra-thin grinding wheel is a porous structure; the superhard abrasive is diamond; the superhard abrasive accounts for the volume content ratio of the ultra-thin grinding wheel is 60%, the abrasive particle size is 9 ~ 12μm; the metal-based carcass is Cu-Sn-Ti alloy The Cu-Sn-Ti alloy has a metal Sn content of 15wt.%, a metal Ti content of 10wt.%, a metal Cu as a margin, and the particle size of each metal powder is 9~12μm;

[0024] The specific steps of its preparation method are as follows:

[0025] (1) Material preparation: first accurately weigh Cu powder, Sn powder, Ti powder and super hard abrasive micronizer, put into the three-dimensional vortex mixer for material mixing for 4 hours, and then through the 200 mesh screen; then add glue according to the 6% mass ratio, stir and mix until there is...

Embodiment 2

[0032] Chip scribing with porous Cu-Sn base ultra-thin grinding wheel preparation method, the ultra-thin grinding wheel consists of superhard abrasive and metal-based carcass, the ultra-thin grinding wheel is a porous structure; the superhard abrasive is cubic boron nitride The superhard abrasive accounts for the volume content ratio of the ultra-thin grinding wheel is 12.5%, the abrasive particle size is 3 ~ 5μm; the metal-based carcass is Cu-Sn-Ti alloy; the Cu-Sn-Ti alloy in the metal Sn content is 20wt.%, the metal Ti content is 10wt.%, the metal Cu is the margin, and the particle size of each metal powder is 7 ~ 8μm;

[0033] The specific steps of its preparation method are as follows:

[0034] (1) Material preparation: first accurately weigh Cu powder, Sn powder, Ti powder and super hard abrasive micronizer, put into the three-dimensional vortex mixer for material mixing for 4 hours, and then through the 200 mesh screen; then add glue according to the 6% mass ratio, stir and...

Embodiment 3

[0041] Chip slicing method for cutting a porous Cu-Sn base ultra-thin grinding wheel, the ultra-thin grinding wheel is composed of super-hard abrasive and metal-based carcass, the ultra-thin grinding wheel is a porous structure; the super-hard abrasive is diamond; the superhard abrasive accounts for the volume content ratio of the ultra-thin grinding wheel is 25%, the abrasive particle size is 9 ~ 12μm; the metal-based carcass is Cu-Sn-Ti alloy The metal Sn content in the Cu-Sn-Ti alloy is 35wt.%, the metal Ti content is 6wt.%, the metal Cu is the margin, and the particle size of each metal powder is 9~12μm;

[0042] The specific steps of its preparation method are as follows:

[0043] (1) Material preparation: first accurately weigh Cu powder, Sn powder, Ti powder and super hard abrasive micronizer, put into the three-dimensional vortex mixer for material mixing for 3 hours, and then through the 140 mesh screen; then add glue according to the 4% mass ratio, stir and mix until the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a porous Cu-Sn-based ultra-thin grinding wheel for chip scribing and a preparation method thereof. The metal base of the ultra-thin grinding wheel is Cu-Sn-Ti alloy, and the porous structure of the ultra-thin grinding wheel is made of Cu / Sn The Kirkendall effect reaction caused by the difference in diffusion rate between elements is generated; the preparation method steps include material preparation, cold pressing forming, brazing forming and mechanical processing; wherein the brazing forming is composed of two heating processes of hole making and active brazing; The parameters of the pore-making process are 200-250° C., 30-240 minutes; the parameters of the active brazing process are 650-950° C., 5-100 minutes. The invention uses the active brazing technology to make the metal bond and the super-hard abrasive have a chemical metallurgical reaction to improve the holding force of the abrasive grain, so that the ultra-thin grinding wheel can be further thinned; the Kirkendall effect between Cu / Sn elements is used to introduce a porous structure To improve the self-sharpening ability of the ultra-thin grinding wheel to improve the chip cutting quality, and do not need to add materials such as pore-forming agents to reduce production costs.

Description

【Technical field】 [0001] The present invention relates to the technical field of chip scribing wheel tool manufacturing, specifically to a chip scribing cutting porous Cu-Sn base ultra-thin grinding wheel and preparation method thereof. 【Background】 [0002] Wafer slicing is an important process in the semiconductor industry and bears the economic cost of the previous multiple processes. Due to high processing efficiency, good grinding quality and low economic cost, ultra-thin grinding wheels have become an irreplaceable cutting tool in the semiconductor industry. With the miniaturization and large capacity of semiconductor chips, the highly dense inter-chip cutting space is getting smaller and smaller, which will greatly improve the technical requirements for the thickness and strength of ultra-thin grinding wheels. The binder of ultra-thin grinding wheel is mainly divided into three categories: resin, ceramic and metal, and the metal binder can avoid the problems of low resin ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24D3/10B24D3/34B24D18/00
CPCB24D3/10B24D3/342B24D18/0009B24D18/009
Inventor 李勉穆德魁徐西鹏
Owner HUAQIAO UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com