Silicon wafer cleaning agent, preparation method and silicon wafer cleaning process

A silicon wafer cleaning agent and silicon wafer cleaning technology are applied in the direction of cleaning methods and utensils, preparation of detergent mixture compositions, cleaning methods using liquids, etc., and can solve the problems of poor silicon powder speed, poor organic matter removal ability, cleaning agent Many problems, to achieve the effect of improving conversion efficiency, improving appearance qualification rate, and improving surface quality

Pending Publication Date: 2021-06-29
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are still many problems in cleaning silicon wafers with cleaning agents on the market, such as poor removal of organic matter, poor speed of silicon powder adsorbed o...

Method used

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Examples

Experimental program
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Effect test

preparation example Construction

[0035] The present invention also provides a preparation method of the above-mentioned silicon chip cleaning agent, comprising the steps of:

[0036] (1) Weigh each component according to the mass percentage of the above-mentioned silicon wafer cleaning agent grouping, and set aside;

[0037] (2) Add pure water into the stirred tank, add inorganic base, trisodium nitrilotriacetate, tallow fatty alcohol polyoxyethylene ether and dodecyl trimethyl ammonium chloride into the pure water, stir well, Obtain the silicon wafer cleaning agent.

[0038] Further, the present invention also provides a silicon wafer cleaning process, comprising the following specific steps:

[0039] (1) Ultrasonic pre-cleaning of silicon wafers in pure water at 40-60°C for 3-10 minutes;

[0040] (2) First prepare the above-mentioned silicon wafer cleaning agent into an aqueous silicon wafer cleaning agent solution with a mass percentage concentration of 3-6%, and then place the silicon wafer cleaned in s...

Embodiment 1

[0046] Take the silicon wafers that have been cut and degummed in the silicon rod cutting process, and clean them, including the following specific steps:

[0047] (1) Take 1200 pieces of silicon wafers and perform ultrasonic pre-cleaning in 55°C pure water for 360s;

[0048] (2) Prepare an aqueous solution of a silicon wafer cleaning agent with a mass percentage concentration of 3% at room temperature; specifically, weigh 240 g of potassium hydroxide; 180 g of trisodium nitrilotriacetate; 60 g of tallow fatty alcohol polyoxyethylene ether; Base trimethyl ammonium chloride 180g; Make up deionized water to 6000g, stir to obtain silicon chip cleaning agent; Add this silicon chip cleaning agent in 200L water, be mixed with silicon chip cleaning agent aqueous solution;

[0049] Place the silicon wafer cleaned in step (1) in the aqueous solution of silicon wafer cleaning agent, and ultrasonically clean it at 55°C for 600s;

[0050] (3) Rinse the wafer in pure water at 55°C for 360...

Embodiment 2

[0055] Take the silicon wafers that have been cut and degummed in the silicon rod cutting process, and clean them, including the following specific steps:

[0056] (1) Take 1200 pieces of silicon wafers and perform ultrasonic pre-cleaning in 50°C pure water for 360s;

[0057](2) Prepare an aqueous solution of a silicon wafer cleaning agent with a mass percentage concentration of 4% at room temperature; specifically, weigh 320 g of potassium hydroxide; 240 g of trisodium nitrilotriacetate; 160 g of tallow fatty alcohol polyoxyethylene ether; Trimethyl ammonium chloride 240g; Add deionized water to 8000g, stir to obtain a silicon wafer cleaning agent; add this silicon wafer cleaning agent to 200L water, and be mixed with a silicon wafer cleaning agent aqueous solution;

[0058] Place the silicon wafer cleaned in step (1) in an aqueous solution of silicon wafer cleaning agent, and ultrasonically clean it at 50°C for 720s;

[0059] (3) Rinse the wafer in pure water at 50°C for 36...

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PUM

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Abstract

The invention discloses a silicon wafer cleaning agent, a preparation method and a silicon wafer cleaning process. The silicon wafer cleaning agent is prepared from the following components in percentage by mass: 2-6% of inorganic base, 2-6% of trisodium nitrilotriacetate, 0.5-6% of tallow fatty alcohol-polyoxyethylene ether, 2-6% of dodecyl trimethyl ammonium chloride and the balance of pure water. According to the silicon wafer cleaning agent, silicon powder adsorbed on the surface of a silicon wafer can be rapidly cleaned, and the cleaning agent left on the surface of the silicon wafer after cleaning is little; according to the silicon wafer cleaning process disclosed by the invention, the residual organic matters on the surface of the cleaned silicon wafer are few, the appearance qualification rate of the silicon wafer is greatly improved, the surface quality of the silicon wafer is improved, and the conversion efficiency of a manufactured solar cell is improved by 0.03-0.05%.

Description

technical field [0001] The invention relates to the field of silicon wafer cutting for photovoltaic solar cells, in particular to a silicon wafer cleaning agent, a preparation method and a silicon wafer cleaning process. Background technique [0002] The silicon wafers used in the production process of semiconductor devices must be strictly cleaned after cutting. A small amount of pollution will also cause the device to fail. The purpose of cleaning is to remove the contamination impurities on the surface of the silicon wafer, including organic and inorganic substances. Some of these impurities exist on the surface of the silicon wafer in the form of atoms or ions, and some exist in the form of thin films or particles, and these impurities can cause various defects. [0003] With the rapid update and replacement of photovoltaic solar cell technology, the technical route of monocrystalline silicon cells has become more and more mature, which has contributed to the R&D and app...

Claims

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Application Information

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IPC IPC(8): C11D1/72C11D3/04C11D3/30C11D3/33B08B3/12H01L21/02H01L31/18
CPCC11D1/72C11D3/044C11D3/33C11D3/30B08B3/12C11D11/0047H01L21/02057H01L21/02082H01L31/1804Y02P70/50Y02E10/547
Inventor 马琦雯邓舜
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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