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Method for cleaning indium phosphide wafer

A technology of indium wafers and wafers, which is applied in the cleaning field of indium phosphide wafers, can solve the problems of poor yield and many bright spots on the wafer surface, and achieve the effects of increased yield, reduced bright spots, and good stability

Pending Publication Date: 2021-06-25
中锗科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for cleaning an indium phosphide wafer, which solves the technical problems of many bright spots on the wafer surface and poor yield rate in the prior art

Method used

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  • Method for cleaning indium phosphide wafer
  • Method for cleaning indium phosphide wafer
  • Method for cleaning indium phosphide wafer

Examples

Experimental program
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Effect test

Embodiment 1

[0034] Take a 4-inch indium phosphide wafer, polish it and dry it, and perform the following steps in sequence: figure 1 As shown, use a cleaning jig to clamp, soak in hot sulfuric acid (mass concentration: 50%) at 30°C for 20S, soak in cold sulfuric acid (mass concentration: 50%) at 20°C for 15S; immerse in a water bowl filled with clean water Soak in water for 3s; then take it out and immediately put it into the 1# overflow tank, and at the same time use a water gun to rinse the overflow tank to keep the water overflowing. The cleaning time: 15S, and the overflow water volume is 20L / min; The mass ratio of acid to water is 1:500) Soak in 15S; put into 2# overflow tank, and at the same time use a water gun to rinse the overflow tank to keep the water overflowing, cleaning time: 5S, overflow water volume is 30L / min ;Soak in dilute sulfuric acid (mass concentration: 3%) at normal temperature for 15S, put into 3# overflow tank, and use a water gun to rinse the overflow tank to ke...

Embodiment 2

[0036] Take a 4-inch indium phosphide wafer, polish it and dry it, and proceed as follows in sequence: use a cleaning jig to clamp it, soak it in 35°C hot sulfuric acid (50% mass concentration) for 15 seconds, and soak it in 15°C cold sulfuric acid (mass concentration is 50%). Concentration is 50%) in the water for 20S; immersed in a bowl filled with clean water for 2s; then take it out and immediately put it into the 1# overflow tank, and at the same time use a water gun to rinse the overflow tank to keep the water overflowing, cleaning time: 10S, The overflow water volume is 25L / min; soak in citric acid water at room temperature (the mass ratio of citric acid to water is 1:1000) for 20S; put it into the 2# overflow tank, and use a water gun to flush the overflow tank at the same time to keep the water Overflow state, cleaning time: 15S, the overflow water volume is 10L / min; soak in dilute sulfuric acid (mass concentration: 2%) at room temperature for 20S, put it into the 3# o...

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Abstract

The invention discloses a method for cleaning an indium phosphide wafer. The method comprises the following steps of: spin-drying a polished indium phosphide wafer; and sequentially performing hot sulfuric acid soaking, cold sulfuric acid soaking, washing, citric acid aqueous solution soaking, washing, dilute inorganic acid soaking, washing, ammonia water and hydrogen peroxide mixed solution soaking and washing, and spin-drying. Compared with the prior art, the method for cleaning the indium phosphide wafer has the following advantages of obviously reduced bright spots, obviously improved yield, good stability, high safety, and low energy consumption.

Description

technical field [0001] The invention relates to a method for cleaning an indium phosphide wafer, belonging to the technical field of crystal cleaning. Background technique [0002] Inp crystal has the advantages of high saturation electric field drift speed, good thermal conductivity and strong radiation resistance, and is suitable for manufacturing high-frequency, high-speed and low-power microwave devices and circuits. [0003] The quality of the InP substrate directly affects the quality of the epitaxial layer, which in turn affects the performance of InP-based devices. In addition to ensuring the performance quality of the substrate material, the surface quality of the substrate must also meet the customer's requirements and match the customer's process. [0004] InP cleaning directly affects the cleanliness, roughness, oxide layer thickness, white fog, surface impurity content, etc. of the substrate surface. These parameters will affect the subsequent InP epitaxy and de...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02057H01L21/02068H01L21/02074Y02P70/50
Inventor 郑金龙刘兴达曾琦柯尊斌王卿伟
Owner 中锗科技有限公司
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