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Preparation method of large-area molybdenum disulfide film

A molybdenum disulfide, large-area technology, applied in chemical instruments and methods, gaseous chemical plating, chemically reactive gases, etc., can solve the problems of difficult to achieve large-area growth, poor uniformity, etc., and achieve low cost and compactness. Excellent and controllable effect

Active Publication Date: 2021-05-28
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the MoS prepared by this method 2 Thin films are usually grown on the edge of the substrate, with poor uniformity, and it is difficult to achieve large-area growth

Method used

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  • Preparation method of large-area molybdenum disulfide film

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Effect test

Embodiment 1

[0028] First, the substrate is ultrasonically cleaned with acetone, isopropanol, and deionized water to remove surface impurities; then, the surface is blown dry with a nitrogen gun. Place the cleaned substrate in the sputtering area of ​​the magnetron sputtering system, and place the high-purity molybdenum target (purity>99.99%) in the sputtering target position in the magnetron sputtering machine, at 1.0×10 -3 Under the vacuum degree of Pa, a constant current source is used for sputtering, and the sputtering rate is 0.18nm / s. The obtained substrate containing the metal molybdenum source was placed in a tube furnace, exposed to air and heated for full oxidation. The oxidation temperature was 250° C., and the treatment time was 120 minutes. Put the molybdenum oxide source substrate face up into the bottom of the quartz boat, stack 4 silicon wafers next to the substrate in the downstream position of the airflow as auxiliary substrates, and place the silicon wafer with a larger ...

Embodiment 2

[0030] First, the substrate is ultrasonically cleaned with acetone, isopropanol, and deionized water to remove surface impurities; then, the surface is blown dry with a nitrogen gun. Place the cleaned substrate in the sputtering area of ​​the magnetron sputtering system, and place the high-purity molybdenum target (purity>99.99%) in the sputtering target position in the magnetron sputtering machine, at 1.0×10 -3 Under the vacuum degree of Pa, a constant current source is used for sputtering, and the sputtering rate is 0.18nm / s. The obtained substrate containing the metal molybdenum source was placed in a tube furnace, exposed to air and heated for full oxidation. The oxidation temperature was 250° C., and the treatment time was 120 minutes. Put the molybdenum oxide source substrate face up into the bottom of the quartz boat, stack 4 silicon wafers next to the substrate in the downstream position of the airflow as auxiliary substrates, and place the silicon wafer with a larger ...

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Abstract

The invention belongs to the field of material preparation, and particularly relates to a preparation method of a large-area molybdenum disulfide film. According to the method, a confinement space method is adopted, a magnetron sputtering method and a chemical vapor deposition method are combined, and reaction parameters are optimized to obtain a large-area MoS2 film material. The film obtained on the basis of a two-step method has the characteristics of large area, good uniformity, strong controllability, good crystallinity and the like, and the method is simple to operate, short in time consumption and capable of being produced and applied on a large scale.

Description

technical field [0001] The invention belongs to the field of material preparation, and in particular relates to a method for preparing a large-area molybdenum disulfide thin film. Background technique [0002] Two-dimensional materials are a kind of sheet-like materials with single / multi-atom thickness, which have excellent physical, chemical, optical, electronic, mechanical and other properties, and have great application prospects in many fields. Among them, graphene-like molybdenum disulfide has attracted extensive attention of researchers in many fields. MoS 2 The crystal mainly has two crystal systems of hexagonal crystal system and trigonal crystal system. Among them, the hexagonal crystal system is also called the 2H phase, which is also the most stable structure. It consists of two single-layer MoS 2 It is formed by periodic accumulation and belongs to the P63 / mmc space group. The trigonal crystal system has two phases: 1T (space group P3m1) and 3R phase (space gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/18C23C14/58C23C16/30C30B29/46C30B25/00
CPCC23C14/35C23C14/165C23C14/185C23C14/5853C23C16/305C30B29/46C30B25/00
Inventor 廖霞霞周子皓杨子凡周杨波
Owner NANCHANG UNIV
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