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LIGBT device with integrated NMOS transistor

A device and collector technology, applied in the field of LIGBT devices, can solve the problems of increasing device on-voltage drop and reducing anode P+ injection efficiency.

Active Publication Date: 2021-04-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the self-biased n-MOS in this structure reduces the injection efficiency of the anode P+ and increases the conduction voltage drop of the device.

Method used

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  • LIGBT device with integrated NMOS transistor
  • LIGBT device with integrated NMOS transistor
  • LIGBT device with integrated NMOS transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Such as image 3 As shown, this example includes a bottom-up P substrate 1, an insulating dielectric buried layer 2, and a top semiconductor layer; the top semiconductor layer includes an emitter structure, a gate structure, an N drift region 3, and a collector structure; The emitter structure includes a P well region 4, a P+ body contact region 5 and an N+ emitter region 6, the P+ body contact region 5 and the N+ emitter region 6 are located on the upper surface of the P well region 4, and the N+ emitter region 6 is located near the N drift On one side of the region 3, the emitter is jointly drawn from the surface of the P+ body contact region 5 and the N+ emitter region 6; the gate structure includes a gate oxide layer 7 and a gate polysilicon 8 covering the gate oxide layer 7, and the gate oxide layer 7 Located on the P well region 4 and the two ends overlap with the N+ emitter region 6 and the N drift region 3 respectively, and the lead-out end of the gate polysilic...

Embodiment 2

[0024] Such as Figure 4 As shown, compared with Embodiment 1, the N+ collector region 11 is located on the surface of the N drift region 3 in this example. The N+ collector region 11 is located on the surface of the N drift region 3, which can effectively alleviate the pressure of the integrated NMOS region to suppress the Snapback effect, so that the snapback effect can be effectively suppressed at a lower concentration of the P-channel region, and the electrons stored in the drift region can be further accelerated. The extraction reduces the turn-off time and turn-off loss.

Embodiment 3

[0026] Such as Figure 5 As shown, compared with Embodiment 1, the P+ collector electrode 10 overlaps with the N+ source region 13 and the P-type channel region 14 in this example. The P+ collector 10 has no depletion effect on the P-channel region 14 above it, so the snapback phenomenon can be suppressed at a lower doping concentration of the P-channel region, and the extraction of electrons stored in the drift region can be further accelerated , reducing the turn-off time and turn-off loss.

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Abstract

The invention belongs to the technical field of power semiconductors, and relates to an LIGBT device with an integrated NMOS transistor. The device is mainly characterized in that an N+ collector region is introduced near a P+ collector region, an NMOS transistor is integrated above the collector region, the MOS transistor is isolated from the collector region below through a layer of an insulating medium, one end of the MOS transistor is in P+ short connection with a collector electrode, and the other end of the MOS transistor is in N+ short connection with the collector electrode through a conductive material. When the new device is in reverse conduction, the integrated NMOS transistor provides a path for current, so the new device has better reverse recovery characteristics. During forward conduction, threshold voltage is increased by increasing the concentration of a P-type channel region in the integrated NMOS transistor, and the punch-through of the MOS transistor is prevented, so the snapback effect can be effectively inhibited. When the device is turned off, the integrated NMOS transistor provides a path for electron extraction, so the new device has shorter turn-off time and lower turn-off loss. The LIGBT device provided by the invention has the advantages that a reverse conduction function can be achieved and the turn-off loss is lower compared with a traditional LIGBT device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a LIGBT device with an integrated NMOS tube. Background technique [0002] In a power integrated circuit system, a LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor) device is often connected in antiparallel with a freewheeling diode to achieve reverse conduction. However, the additional freewheeling diode will greatly increase the chip area, and at the same time, the extra metal wiring of the freewheeling diode also increases the parasitic effect inside the chip, thus increasing the power consumption of the device. In order to avoid the above-mentioned problems while making the LIGBT capable of reverse current flow, researchers have integrated the LIGBT and the free wheel diode, and this device is called a reverse conducting (Reverse Conducting, RC) LIGBT. The traditional RC-LIGBT introduces the N+ region next t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/07H01L29/08H01L29/739
CPCY02B70/10
Inventor 杨可萌戴恺纬罗小蓉马臻邓高强魏杰李聪聪张森李杰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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