Preparation method of source and drain electrodes of high-electron-mobility transistor

Abstract

The invention belongs to the technical field of transistor preparation, and particularly relates to a preparation method of source and drain electrodes of a high-electron-mobility transistor. The preparation method provided by the invention adopts an angular evaporation self-alignment process, and basically comprises the following steps: on the basis of a T-shaped gate growth process, accurately controlling the distance between a source electrode and a gate electrode and the distance between a drain electrode and the gate electrode of a high-electron-mobility transistor device in an angular evaporation manner by utilizing a unique T-shaped structure of the gate electrode of the high-electron-mobility transistor; therefore, the positions of the source electrode, the drain electrode and the T-shaped gate of the high-electron-mobility transistor device achieve the purpose of position-controllable self-alignment, and finally, a new adjustable geometrical parameter freedom degree is provided for improving the performance of the device. The method provided by the invention can be used for preparing a high-electron-mobility transistor device with a T-shaped gate structure to obtain a symmetrical or asymmetrical distance between a source and a gate and a distance between a drain and the gate, and is compatible with the existing semiconductor process at the same time.

Description

technical field [0001] The invention belongs to the technical field of transistor preparation, and in particular relates to a method for preparing source and drain electrodes of high electron mobility transistors. Background technique [0002] As the field of wireless communication develops towards higher speed and lower latency. High electron mobility transistors with higher electron mobility will be more widely used in the communication market due to their higher frequency and lower communication delay. However, because high electron mobility transistors obtain higher cut-off frequency characteristics, higher processing precision must be required, which greatly increases the cost of high electron mobility transistor devices and limits its large-scale application. Generally speaking, in order to obtain higher frequencies, in addition to optimizing the layered structure of materials, appropriately reducing the drain-to-gate spacing can increase the maximum available gain of...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing the source and drain electrodes of high electron mobility transistors with low manufacturing cost and simple process, so as to solve the problem of accurately controlling the distance between the source and drain electrodes and the gate during the preparation process of high electron mobility transistors problem, for higher device performance

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