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Synthesis method of indium phosphide semiconductor material

A synthesis method and technology of indium phosphide, which are applied in chemical instruments and methods, polycrystalline material growth, crystal growth and other directions, can solve problems such as environmental pollution, and achieve the effects of alleviating environmental pollution problems, avoiding pollution and solving environmental pollution problems.

Pending Publication Date: 2021-04-20
宁波建锡新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a synthetic method of indium phosphide semiconductor material, the temperature under the red phosphorus sublimation temperature occurs liquid phase recombination, the reaction occurs in a transient high temperature, no or only a trace amount of phosphorus vapor is produced in the process, It can alleviate and solve the environmental pollution problem in the preparation process of indium phosphide material

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Select high-purity red phosphorus particles of 0.5-1mm and put them into a barrel-shaped feeding chamber. There is a ventilation pipe connected under the feeding chamber. The red phosphorus particles can continuously and automatically flow into the ventilation pipe under the action of gravity. The ventilation pipe is used for fogging. Part of the argon channel of the indium melt;

[0023] (2) Put the pure indium block into a quartz crucible in the vacuum atmosphere of a 200kg vacuum induction furnace, and then heat it to about 250°C to melt the indium, and then cast the indium melt into the crucible with an atomizing nozzle below, The indium melt is atomized with argon gas, and the red phosphorus particles are brought into the indium melt during the flow of the argon gas. The pressure of argon gas for atomization is 0.7MPa, the inner diameter of the metal catheter is 2.5mm, and the outer diameter is 7mm. During the atomization process, phosphorus is melted by the he...

Embodiment 2

[0026] (1) Select 1-2mm high-purity red phosphorus particles and put them into the square barrel-shaped feeding chamber. There is a ventilation pipe connected under the feeding chamber. The red phosphorus particles can continuously and automatically flow into the ventilation pipe under the action of gravity. The ventilation pipe is used for mist Part of the nitrogen channel of the indium chloride melt;

[0027] (2) In a nitrogen-protected resistance furnace, put the pure indium block into the quartz crucible of the prefabricated nozzle below. The inner diameter of the quartz crucible is about 450mm, the depth is about 700mm, and the wall thickness of the crucible is about 25mm. The inner diameter of the quartz guiding liquid tube with the nozzle pre-installed in the crucible is 3mm, the outer diameter is 7.5mm, and the upper opening is sealed with a quartz plug. Heat the pure indium to about 200°C to completely melt the indium, and then open the plug above the nozzle to atomiz...

Embodiment 3

[0030] (1) Select high-purity red phosphorus particles of 0.5-2mm and put them into the barrel-shaped feeding chamber. There is a ventilation pipe connected under the feeding chamber. The red phosphorus particles can continuously and automatically flow into the ventilation pipe under the action of gravity. The ventilation pipe is used for atomization part of the argon channel of the indium melt;

[0031] (2) Melt the high-purity indium block in a 25kg vacuum suspension melting furnace, melt and heat the pure indium to about 270°C, and then cast the indium melt into a crucible with an atomizing nozzle below, and use argon gas to melt the indium The melt is atomized, and the red phosphorus particles are brought into the indium melt during the flow of argon. The pressure of argon gas for atomization is 0.9MPa, the inner diameter of the metal catheter is 3.5mm, and the outer diameter is 8mm. During the atomization process, phosphorus is melted by the heat of indium melt and forms ...

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Abstract

The invention provides a synthesis method of an indium phosphide semiconductor material, and particularly relates to the field of photoelectric integrated chips and high-speed electronic devices. The synthesis method comprises the following steps: S1, melting a pure indium block, blowing indium melt through an atomizing nozzle by using a mixture of protective gas and phosphorus particles, and atomizing the indium melt into powder to form composite particles; S2, putting the phosphorus-indium composite particles prepared in the above process into a transparent quartz glass container, vacuumizing the quartz container or introducing protective gas into the quartz container, and enabling the phosphorus-indium composite particles to be flatly laid in the quartz container or continuously move; and S3, scanning the phosphorus-indium composite particles through a quartz container by using laser, enabling the phosphorus-indium composite particles to continuously and sequentially generate instantaneous reaction to synthesize indium phosphide by controlling a laser power and a scanning rate, and keeping laser scanning to synthesize indium phosphide particles from the phosphorus-indium composite particles in the quartz container. The method can relieve and solve the problem of environmental pollution in the preparation process of the indium phosphide material.

Description

technical field [0001] The invention belongs to the field of photoelectric integrated chips and high-speed electronic devices, and in particular relates to a synthesis method of indium phosphide semiconductor materials. Background technique [0002] Indium phosphide (InP) is an important class of semiconductors, which is composed of group III element indium (In) and group V element phosphorus (P). Compared with silicon (Si)-based semiconductor materials, indium phosphide semiconductor has a lower threshold voltage and good thermal characteristics, which can achieve higher integration and work at lower voltage; moreover, indium phosphide semiconductor The mobility of electrons and holes is more than 5 times higher than that of silicon-based semiconductors, and the operating frequency can exceed 1THz, so that higher frequency response can be achieved. Indium phosphide semiconductor has an irreplaceable role and important development prospects in 5G / 6G mobile communications, l...

Claims

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Application Information

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IPC IPC(8): C30B28/02C30B29/40B22F9/08
Inventor 王亚平姚建军白浩博于丰罗凯予
Owner 宁波建锡新材料有限公司
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