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Passivation structure applied to contact passivation battery and preparation method of passivation structure

A battery and contact technology, applied in the field of solar cells, can solve problems such as large failure rate

Pending Publication Date: 2021-04-16
CHINT NEW ENERGY TECH (HAINING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Its disadvantage is that the above-mentioned patent discloses the formation of a silicon dioxide or silicon oxynitride layer under the silicon substrate, which still has a large refractive index for light.

Method used

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  • Passivation structure applied to contact passivation battery and preparation method of passivation structure
  • Passivation structure applied to contact passivation battery and preparation method of passivation structure
  • Passivation structure applied to contact passivation battery and preparation method of passivation structure

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preparation example Construction

[0040] A method for preparing a passivation structure applied to a contact passivation battery, comprising the following preparation steps:

[0041] A. N-type monocrystalline silicon wafers are used, and groove-type double-sided texturing is adopted, and the weight loss is 0.3-0.35g;

[0042] B. Carry out boron expansion on the front surface, and control the surface concentration to 1E+19-2E+19 / cm 3 ;

[0043] C, using acid (acid is HF or HNO 3 ) removing the back BSG and performing back etching, then cleaning and retaining the front BSG layer, the back etching weight loss is 0.2-0.5g, and the reflectivity after back etching is >32%;

[0044] D. Using tubular oxidation, deposit a layer of SiO with a thickness of 1.4-1.6nm on the back of the silicon wafer 2 layer, and then deposited SiO under gas flow x N y layer, and do in-situ doping at the same time, the rear resistance of doping is about 20-40Ω / sq; the air flow rate is NH 3 with SiH 4 flow ratio or N 2 O and SiH 4 ...

Embodiment 1

[0049] A passivation structure applied to a contact passivation battery, comprising an N-type substrate 1, two positive electrodes 2 arranged on the front of the N-type substrate 1 and two positive electrodes 2 arranged on the back of the N-type substrate 1 Negative electrode 3, the back side of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.

[0050] The front side of the N-type substrate 1 is sequentially provided with a P+ layer 7, AlO x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through the SiN x Layer 6, AlO x Layer 8, in contact with P+ layer 7. The back of the N-type substrate 1 is sequentially provided with SiO 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 with partial thickness of doped polycrystalline SiO x N y Layer 5, with doped polycrystalline S...

Embodiment 2

[0060] A passivation structure applied to a contact passivation battery, comprising an N-type substrate 1, two positive electrodes 2 arranged on the front of the N-type substrate 1 and two positive electrodes 2 arranged on the back of the N-type substrate 1 Negative electrode 3, the back side of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.

[0061] The front side of the N-type substrate 1 is sequentially provided with a P+ layer 7, AlO x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through the SiN x Layer 6, AlO x Layer 8, in contact with P+ layer 7. The back of the N-type substrate 1 is sequentially provided with SiO 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 with partial thickness of doped polycrystalline SiO x N y Layer 5, with doped polycrystalline S...

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Abstract

The invention relates to the technical field of solar batteries, and discloses a passivation structure applied to a contact passivation battery and a preparation method of the passivation structure in order to solve the problem of high light absorption rate of a contact passivation layer in a TOPCon battery in the prior art. The passivation structure comprises an N-type substrate, two positive electrodes arranged on the front surface of the N-type substrate, and two negative electrodes arranged on the back surface of the N-type substrate, wherein a SiO2 layer is arranged on the back surface of the N-type substrate, and a doped polycrystalline SiOxNy layer is arranged on the SiO2 layer. According to the invention, the doped polycrystalline silicon oxynitride layer is used for replacing a polycrystalline silicon layer, and on the basis of ensuring small change of contact resistance, the light absorption of the contact passivation layer is reduced through doping and annealing under proper conditions, and the efficiency of the contact passivation type cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a passivation structure applied to a contact passivation cell and a preparation method thereof. Background technique [0002] TOPCon solar cell (Tunnel Oxide Passivated Contact) is a solar cell that uses an ultra-thin oxide layer as a passivation layer structure. An ultra-thin tunneling oxide layer and a thin layer of highly doped polysilicon are prepared on the back of the battery, and the two together form a passivation contact structure, which provides good surface passivation for the back of the silicon wafer, super The thin oxide layer can allow many electrons to tunnel into the polysilicon layer while blocking the recombination of minority electrons and holes, and then the electrons are transported laterally in the polysilicon layer and collected by the metal, thereby greatly reducing the metal contact recombination current and improving the open circuit voltage and sho...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/068H01L31/18
CPCY02E10/546Y02P70/50
Inventor 赵迎财马玉超廖晖何胜徐伟智
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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