Preparation method of space gallium arsenide solar cell electrode combined with germanium

A solar cell, gallium arsenide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of expensive single cells, low product reliability, corroded cells, etc., to improve material utilization and reduce process costs. , the effect of improving production efficiency

Pending Publication Date: 2021-04-02
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing batteries use gold-germanium-silver as the electrode system. Since the germanium material will form a surface layer oxide within 1 minute in the air, it is necessary to ensure that the germanium material is prepared under vacuum conditions and covered with a sufficient thickness behind the germanium layer during the preparation of the electrode. Silver to ensure that oxygen will not enter through the pores of the silver layer to cause oxidation of the material. The single battery is expensive, and it may corrode the battery and cause battery failure. The product reliability is low, so the electrode preparation method of this system is severely limited.

Method used

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  • Preparation method of space gallium arsenide solar cell electrode combined with germanium
  • Preparation method of space gallium arsenide solar cell electrode combined with germanium
  • Preparation method of space gallium arsenide solar cell electrode combined with germanium

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Embodiment 1

[0031]S1: Corrosion EtOAc EtOAc EtOAc EtOAc EtOAc EtOAc Solids Soak 55 ~ 65S; after soaking, the epithelial sheet was taken out in the deionized water, and the repeated flushing multiple times, preferably 10-15 times; placed the epithelial sheet in HF: HNO3: H2The O volume ratio of 2: 1: 10 is soaked in the mixed acid solution of 2: 1: 10, so as soon as soaking the epitaxial sheet, the delay is taken out of the deionized water soaked for 9 to 11 minutes, then rinsing, repeatedly rinsing multiple times, preferably 10-15 times . After removing the epithelial sheet, the epither piece is placed in acetone solution to remove the photoresist or tear the heat solution.

[0032]S2: Place the corrosive epitaxial piece on the vapor deposition jig, put it in a vacuum coating machine, vacuum; the vacuum is reached after the machine sets the value, the baking temperature is set to 90 ~ 110 ° C, bake 8 ~ 12min; After the baking is completed, it is placed in the crucible in the crucible, and the vapo...

Embodiment 2

[0038]S1: Corrosion EtOAc EtOAc EtOAc EtOAc EtOAc EtOAc Solids Soak 55 ~ 65S; after soaking, the epithelial sheet was taken out in the deionized water, and the repeated flushing multiple times, preferably 10-15 times; placed the epithelial sheet in HF: HNO3: H2The O volume ratio of 2: 1: 10 is soaked in the mixed acid solution of 2: 1: 10, so as soon as soaking the epitaxial sheet, the delay is taken out of the deionized water soaked for 9 to 11 minutes, then rinsing, repeatedly rinsing multiple times, preferably 10-15 times The epitaxial sheet is then placed in deionized water for rinsing. After the removal, the epithelial sheet is placed in acetone solution to remove the photoresist or tear the heat solution.

[0039]S2: Put the corrosion of the epitaxial piece on the dedicated carrier is taken out by the robot arm. The vacuum is taken into the first vacuum chamber. When the vacuum reaches the machine set value, the baking temperature is set to 90 ~ 110 ° C, baked 8 to 12 minutes; af...

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Abstract

The invention provides a preparation method of a space gallium arsenide solar cell electrode combined with germanium. The method comprises the following steps of corroding an epitaxial wafer taking germanium as a substrate, preparing a gold contact layer and a silver layer on the non-active surface of the epitaxial wafer by using a vacuum method, preparing a silver thickening layer on the silver layer by using an electroplating method, and finally carrying out heat treatment on the epitaxial wafer with the prepared silver thickening layer; and the gallium arsenide solar cell electrode combinedwith germanium and used for the space being obtained. The preparation method is advantaged in that the electrode can be prepared by combining a vacuum method (a vacuum evaporation method or a magnetron sputtering method and the like) and a non-vacuum method (a liquid-phase thin film growth method such as an electroplating method and the like), the material utilization rate can be increased, production cost can be reduced, and productivity can be improved on the premise of not purchasing large equipment; ohmic contact between the electrode and a substrate material can be realized, and firmnessbetween contact surfaces meets the space use requirement; and product reliability is high.

Description

Technical field[0001]The present invention belongs to the solar cell technology in space, and more particularly to a gallium arsenide solar cell electrode preparation method for binding to germanium.Background technique[0002]Three knots arsenide solar cells are the most widely used space for a class of space in the current space field. It has the characteristics of high conversion efficiency, good radiation resistance, high temperature efficiency. The battery forms a active layer having three PN junction structures by gas phase growth III-V compounds on the substrate, and the current is generated by the metal electrode.[0003]Unlike the solar cells used in the ground, the space battery will run in a specific orbit, and its operation has a strong temperature alignment during operation, and its variation range and temperature change are far greater than the ground environment. Therefore, space products are more stringent for electrodes in the battery in a space environment. Different t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/1852Y02P70/50Y02E10/544
Inventor 王鑫杜永超欧伟铁剑锐梁存宝孙希鹏李晓东肖志斌
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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