High-reliability GaN-based power device and preparation method thereof

Abstract

The invention belongs to the technical field of semiconductors, and discloses a high-reliability GaN-based power device, which comprises a substrate and a GaN-based layer from bottom to top, and is characterized in that a source electrode and a drain electrode are respectively arranged at two ends of the GaN-based layer, a gate electrode is arranged in the middle of the GaN-based layer, a barrierlayer and a passivation layer are further arranged in an area between the gate electrode and the drain electrode from bottom to top, only the passivation layer is arranged in an area between the gateelectrode and the source electrode, and the barrier layer is used for reducing the number of electron traps in the GaN-based layer and preventing electrons of the gate electrode from entering the electron traps. The invention further discloses a preparation method of the high-reliability GaN-based power device. According to the preparation method, the etching process can be accelerated, the flatness of the surface of the groove after etching can be ensured, and a better choice is provided for industrial application of a groove method.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-reliability gallium nitride-based power device and a preparation method. Background technique [0002] Due to the superior physical properties of gallium nitride GaN materials such as large band gap, strong breakdown electric field, high electron mobility and high saturation electron drift velocity, GaN-based electronic devices are more suitable for high-temperature, high-voltage and high-temperature applications than silicon-based electronic devices. work under extreme conditions such as frequency. In particular, GaN-based power devices based on AlGaN / GaN heterojunctions have become core devices in the fields of power electronics, wireless communications, and radar due to their good high-frequency and high-power characteristics. However, although the performance of GaN-based power devices is constantly making breakthroughs, the large-scale commercial application o...

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Problems solved by technology

However, although the performance of GaN-based power devices is constantly making breakthroughs, the large-scale commercial application of the device is still limited by various electrical reliability problems, one of which is the current collapse, that is, the device is under a large electric field stress. or in case of large current stress, the output current decreases

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