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Bulk acoustic wave magnetoelectric array antenna and preparation method

An array antenna and bulk acoustic wave technology, applied in the direction of separately powered antenna array, antenna, antenna array, etc., can solve the problems of low gain of a single bulk acoustic wave magnetoelectric antenna, limited application range of radiation gain, small radiation area, etc., to achieve Enhance directivity and radiation gain, prevent mutual interference, and improve the effect of radiation gain

Inactive Publication Date: 2021-03-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, since the size of the bulk acoustic wave magnetoelectric antenna is usually on the order of microns and the radiation area is small, the gain of a single bulk acoustic wave magnetoelectric antenna is low and the directivity is poor.
This has led to the low radiation gain of the bulk acoustic wave magnetoelectric antenna when it is applied in the radio frequency system, which limits its application range

Method used

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  • Bulk acoustic wave magnetoelectric array antenna and preparation method
  • Bulk acoustic wave magnetoelectric array antenna and preparation method

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Embodiment 1

[0037] Such as figure 1 As shown, a bulk acoustic wave magnetoelectric array antenna in this embodiment includes two array elements 9 installed on a silicon base, and the array elements 9 are all bulk acoustic wave magnetoelectric antennas with the same structure; the bulk acoustic wave magnetoelectric antenna consists of The cavity-type bulk acoustic resonator and the magnetostrictive film are compositely composed; the cavity-type bulk acoustic wave resonator includes a silicon substrate 1, an isolation layer 2, an air cavity 3, a seed layer 4, and a lower electrode layer 5 stacked from bottom to top , the piezoelectric layer 6 and the upper electrode layer 7; the magnetostrictive film is made into the magnetostrictive layer 8 and placed on the upper electrode layer 7. The material of the magnetostrictive film is FeGaB with a thickness of 1 μm; the material of the seed layer and the piezoelectric layer are AlN with a thickness of 30nm and 1 μm respectively. The top view of th...

Embodiment 2

[0050] like Figure 4 As shown, a method for preparing a bulk acoustic wave magnetoelectric array antenna in this embodiment includes the following steps:

[0051] S1, using the photolithography process in Figure 5 (a) Two adjacent grooves are etched on the silicon substrate shown in (a), the distance between adjacent grooves is one wavelength, the depth is 1.5 μm, and the surface area is 100 μm×100 μm-200 μm×200 μm; and oxidized by wet oxygen The process forms about 150nm SiO 2 Isolation layer 2, the result is as Figure 5 as shown in (b);

[0052] S2, using magnetron sputtering to fill the two grooves with amorphous silicon as Figure 5 The sacrificial layer shown in (c) has a thickness of about 1.5 μm, and the thickness of the amorphous silicon is higher than the depth of the groove. After that, the surface of the amorphous silicon layer and the isolation layer 2 are smoothed by using a chemical mechanical polishing process. The results are as follows Figure 5 as sho...

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Abstract

The invention discloses a bulk acoustic wave magnetoelectric array antenna which comprises N array elements installed on a silicon substrate, and the array elements are bulk acoustic wave magnetoelectric antennas of the same structure. The bulk acoustic wave magnetoelectric antenna is formed by compounding a cavity type bulk acoustic wave resonator and a magnetostrictive film; the cavity type bulkacoustic resonator comprises a silicon substrate, an isolation layer, an air cavity, a seed layer, a lower electrode layer, a piezoelectric layer and an upper electrode layer which are stacked and combined from bottom to top, the magnetostriction film is made into a magnetostriction layer and is arranged on the upper electrode layer; the array elements are in constant-amplitude in-phase feeding,the feeding mode is alternating-current voltage feeding, and the array type is a linear array or a planar array; according to the bulk acoustic wave magnetoelectric array antenna and the preparation method provided by the invention, a plurality of bulk acoustic wave magnetoelectric antennas prepared on the same silicon wafer at the same time are arrayed, and the aims of enhancing the directivity of the antenna, improving the radiation gain of the antenna and enabling the antenna to be more suitable for application occasions in wireless communication are achieved.

Description

technical field [0001] The invention relates to the field of antennas, in particular to a bulk acoustic wave magnetoelectric array antenna and a preparation method. Background technique [0002] In the RF front-end device, the antenna plays an increasingly important role as a window for exchanging information with the outside world. The current antenna market is mainly dominated by electrically small antennas based on the working principle of current conduction, but because they radiate electromagnetic waves to the external field through electromagnetic resonance, their size is usually large and it is difficult to achieve miniaturization. Difficult impedance matching, low radiation efficiency and other disadvantages. Bulk acoustic wave magnetoelectric antennas use acoustic resonance to radiate electromagnetic waves to the external field. Since the wavelength of sound waves is much smaller than that of electromagnetic waves, the size of its devices can be greatly reduced. A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q1/22H01Q1/38H01Q1/50H01Q21/06
CPCH01Q1/2283H01Q1/38H01Q1/50H01Q21/061
Inventor 钟慧彭春瑞刘国尉旭波石玉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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