Epitaxial wafer of light-emitting diode and its preparation method

Abstract

The disclosure provides an epitaxial wafer of a light emitting diode and a preparation method thereof, which belong to the technical field of optoelectronic manufacturing. The epitaxial wafer includes a substrate, an AlN buffer layer, a three-dimensional nucleation layer, a u-type GaN layer, an n-type GaN layer, a multi-quantum well layer, a low-temperature p-type layer, an electron blocking layer, and a high-temperature p-type layer. The multi-quantum well layer includes Multiple In x Ga 1‑x N quantum well layer and multiple GaN quantum barrier layers, and the In x Ga 1‑x Composite structure between N quantum well layer and GaN quantum barrier layer, the composite structure includes n-In y Ga 1‑y N layer and SiN layer. n‑In y Ga 1‑y The Si atoms in the N layer can fill the defect vacancies in the InGaN material. The InGaN material with a lower In composition is conducive to weakening the polarization electric field and improving the energy band tilt. The SiN layer is conducive to the uniformity of carriers in the multi-quantum well layer. Diffusion, improve the carrier localization effect, and improve the luminous efficiency of LED.

Description

technical field [0001] The disclosure relates to the technical field of optoelectronic manufacturing, in particular to an epitaxial wafer of a light emitting diode and a preparation method thereof. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) has the advantages of small size, long life, low power consumption, etc., and is currently widely used in automobile signal lights, traffic lights, display screens and lighting equipment, especially for the resolution and display quality of display devices. The requirements are getting higher and higher, and the application of Mini LEDs is also increasing. [0003] At present, GaN-based LED epitaxial wafers usually include a substrate and an AlN buffer layer, a three-dimensional nucleation layer, a u-type GaN layer, an n-type GaN layer, a multi-quantum well layer and a p-type layer grown sequentially on the substrate. After the LED is energized, carriers (including electrons in the n-type GaN layer and...

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Problems solved by technology

[0004] In related technologies, in the growth of Mini LED epitaxy technology, InGaN / GaN materials are used to make multiple quantum wells. Since the lattice constant of InGaN materials is larger than that of GaN, they are subjected to compressive stress, and the compressive stress increases with the increase of In composition. Severe lattice mismatch will directly affect the intensity of piezoelectric polarization. The polarization electric field will cause the energy band of the quantum well to tilt, making the overlap of the electron-hole wave function smaller, and the defects and dislocations in the bottom layer will extend to the quantum well region. A large number of defects and dislocations will reduce the radiation recombination efficiency, resulting in low luminous efficiency of Mini LED

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