Indium arsenide crystal growth device and method

Abstract

The invention provides an indium arsenide crystal growth device and an indium arsenide crystal growth method. The device comprises a growth container, a crucible cover, a furnace body with a furnace chamber and a temperature control device. The growth container comprises an inner crucible and an outer crucible, the crucible cover is used for sealing the outer crucible, the inner crucible comprisesa first main body part, a first seed crystal cavity and a first shoulder part, the first seed crystal cavity is used for containing seed crystals, and the first main body part is located above the first seed crystal cavity; the outer crucible is arranged outside the inner crucible in a sleeving manner and is separated from the inner crucible, and the inner contour of the outer crucible is matchedwith the outer contour of the inner crucible; the growth container is arranged in a furnace chamber, the furnace chamber is sequentially provided with a first temperature zone, a second temperature zone, a third temperature zone, a fourth temperature zone and a fifth temperature zone from top to bottom, and the temperature control devices are arranged in the first temperature zone, the second temperature zone, the third temperature zone, the fourth temperature zone and the fifth temperature zone and used for heating the temperature zones and controlling the temperature of the temperature zones; in the vertical direction of the furnace chamber, the first temperature zone is higher than the top of the growth container, the fifth temperature zone is lower than the bottom of the growth container, and the first seed crystal cavity is located in the fourth temperature zone.

Description

technical field [0001] The disclosure relates to the field of crystal preparation, in particular to an indium arsenide crystal growth device and a growth method. Background technique [0002] Indium arsenide (InAs) is a III-V group compound semiconductor with high electron mobility and mobility ratio, low magnetoresistance effect and small temperature coefficient of resistance. Ideal material. [0003] At present, the main growth method of indium arsenide crystal is the liquid sealing Czochralski method. The growth process of the liquid-sealed Czochralski method is to heat and melt the raw materials in a crucible under the protection of a liquid sealant, insert the seed crystal into the melt through a lifting rod, and lift it slowly to obtain a new crystal at the lower end of the seed crystal. However, this method has high equipment costs, high crystal stress, and high dislocation density, which have adverse effects on crystal growth, resulting in uneven distribution of ov...

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Problems solved by technology

However, this method has high equipment costs, large crystal stress, and high dislocation density, which has an adverse effect on crystal growth, resulting in uneven distribution of the overall crystal mass and low crystallization rate.

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